Absolute determination of charge-coupled device quantum detection efficiency using Si K-edge x-ray absorption fine structure

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We report a method to determine the quantum detection efficiency and the absorbing layers on a front-illuminated charge-coupled device (CCD). The CCD under study, as part of a crystal spectrometer, measures intense continuum x-ray emission from a picosecond laser-produced plasma and spectrally resolves the Si K-edge x-ray absorption fine structure features due to the electrode gate structure of the device. The CCD response across the Si K-edge shows a large discontinuity as well as a number of oscillations that are identified individually and uniquely from Si, SiO{sub 2}, and Si{sub 3}N{sub 4} layers. From the spectral analysis of the structure ... continued below

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5 p. (0.3 MB)

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Dunn, J & Steel, A B May 6, 2012.

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Description

We report a method to determine the quantum detection efficiency and the absorbing layers on a front-illuminated charge-coupled device (CCD). The CCD under study, as part of a crystal spectrometer, measures intense continuum x-ray emission from a picosecond laser-produced plasma and spectrally resolves the Si K-edge x-ray absorption fine structure features due to the electrode gate structure of the device. The CCD response across the Si K-edge shows a large discontinuity as well as a number of oscillations that are identified individually and uniquely from Si, SiO{sub 2}, and Si{sub 3}N{sub 4} layers. From the spectral analysis of the structure and K-edge discontinuity, the active layer thickness and the different absorbing layers thickness can be determined precisely. A precise CCD detection model from 0.2-10 keV can be deduced from this highly sensitive technique.

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5 p. (0.3 MB)

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PDF-file: 5 pages; size: 0.3 Mbytes

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  • Presented at: High Temperature Plasma Diagnostics 2012, Monterey, CA, United States, May 07 - May 10, 2012

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  • Report No.: LLNL-PROC-556511
  • Grant Number: W-7405-ENG-48
  • Office of Scientific & Technical Information Report Number: 1043643
  • Archival Resource Key: ark:/67531/metadc845191

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  • May 6, 2012

Added to The UNT Digital Library

  • May 19, 2016, 3:16 p.m.

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  • April 13, 2017, 6:15 p.m.

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Dunn, J & Steel, A B. Absolute determination of charge-coupled device quantum detection efficiency using Si K-edge x-ray absorption fine structure, article, May 6, 2012; Livermore, California. (digital.library.unt.edu/ark:/67531/metadc845191/: accessed September 21, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.