Semi-polar GaN materials technology for high IQE green LEDs.

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The goal of this NETL funded program was to improve the IQE in green (and longer wavelength) nitride- based LEDs structures by using semi-polar GaN planar orientations for InGaN multiple quantum well (MQW) growth. These semi-polar orientations have the advantage of significantly reducing the piezoelectric fields that distort the QW band structure and decrease electron-hole overlap. In addition, semipolar surfaces potentially provide a more open surface bonding environment for indium incorporation, thus enabling higher indium concentrations in the InGaN MQW. The goal of the proposed work was to select the optimal semi-polar orientation and explore wafer miscuts around this orientation ... continued below

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86 p.

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Koleske, Daniel David; Lee, Stephen Roger; Crawford, Mary Hagerott; Coltrin, Michael Elliott & Fini, Paul June 1, 2013.

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This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 14 times . More information about this report can be viewed below.

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Description

The goal of this NETL funded program was to improve the IQE in green (and longer wavelength) nitride- based LEDs structures by using semi-polar GaN planar orientations for InGaN multiple quantum well (MQW) growth. These semi-polar orientations have the advantage of significantly reducing the piezoelectric fields that distort the QW band structure and decrease electron-hole overlap. In addition, semipolar surfaces potentially provide a more open surface bonding environment for indium incorporation, thus enabling higher indium concentrations in the InGaN MQW. The goal of the proposed work was to select the optimal semi-polar orientation and explore wafer miscuts around this orientation that produced the highest quantum efficiency LEDs. At the end of this program we had hoped to have MQWs active regions at 540 nm with an IQE of 50% and an EQE of 40%, which would be approximately twice the estimated current state-of-the-art.

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86 p.

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  • Report No.: SAND2013-5065
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 1089987
  • Archival Resource Key: ark:/67531/metadc844512

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • June 1, 2013

Added to The UNT Digital Library

  • May 19, 2016, 9:45 a.m.

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  • June 17, 2016, 3:26 p.m.

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Koleske, Daniel David; Lee, Stephen Roger; Crawford, Mary Hagerott; Coltrin, Michael Elliott & Fini, Paul. Semi-polar GaN materials technology for high IQE green LEDs., report, June 1, 2013; Santa Barbara, California. (digital.library.unt.edu/ark:/67531/metadc844512/: accessed October 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.