Boron Nitride by Atomic Layer Deposition: A Template for Graphene Growth

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The growth of single and multilayer BN films on several substrates was investigated. A typical atomic layer deposition (ALD) process was demonstrated on Si(111) substrate with a growth rate of 1.1 Å/cycle which showed good agreement with the literature value and a near stoichiometric B/N ratio. Boron nitride films were also deposited by ALD on Cu poly crystal and Cu(111) single crystal substrates for the first time, and a growth rate of ~1ML/ALD cycle was obtained with a B/N ratio of ~2. The realization of a h-BN/Cu heterojunction was the first step towards a graphene/h-BN/Cu structure which has potential application ... continued below

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Zhou, Mi August 2011.

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The growth of single and multilayer BN films on several substrates was investigated. A typical atomic layer deposition (ALD) process was demonstrated on Si(111) substrate with a growth rate of 1.1 Å/cycle which showed good agreement with the literature value and a near stoichiometric B/N ratio. Boron nitride films were also deposited by ALD on Cu poly crystal and Cu(111) single crystal substrates for the first time, and a growth rate of ~1ML/ALD cycle was obtained with a B/N ratio of ~2. The realization of a h-BN/Cu heterojunction was the first step towards a graphene/h-BN/Cu structure which has potential application in gateable interconnects.

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  • August 2011

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  • May 17, 2012, 9:47 p.m.

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  • Oct. 8, 2012, 1:16 p.m.

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Zhou, Mi. Boron Nitride by Atomic Layer Deposition: A Template for Graphene Growth, thesis, August 2011; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc84305/: accessed September 23, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .