Microscopic Measurements of Electrical Potential in Hydrogenated Nanocrystalline Silicon Solar Cells: Preprint Metadata

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Title

  • Main Title Microscopic Measurements of Electrical Potential in Hydrogenated Nanocrystalline Silicon Solar Cells: Preprint

Creator

  • Author: Jiang, C. S.
    Creator Type: Personal
  • Author: Moutinho, H. R.
    Creator Type: Personal
  • Author: Reedy, R. C.
    Creator Type: Personal
  • Author: Al-Jassim, M. M.
    Creator Type: Personal
  • Author: Yan, B.
    Creator Type: Personal
  • Author: Yue, G.
    Creator Type: Personal
  • Author: Sivec, L.
    Creator Type: Personal
  • Author: Yang, J.
    Creator Type: Personal
  • Author: Guha, S.
    Creator Type: Personal
  • Author: Tong, X.
    Creator Type: Personal

Contributor

  • Sponsor: Solar Energy Technologies Program (U.S.)
    Contributor Type: Organization
    Contributor Info: USDOE Office of Energy Efficiency and Renewable Energy Solar Energy Technologies Program

Publisher

  • Name: National Renewable Energy Laboratory (U.S.)
    Place of Publication: Golden, Colorado
    Additional Info: National Renewable Energy Laboratory (NREL), Golden, CO.

Date

  • Creation: 2012-04-01

Language

  • English

Description

  • Content Description: We report on a direct measurement of electrical potential and field profiles across the n-i-p junction of hydrogenated nanocrystalline silicon (nc-Si:H) solar cells, using the nanometer-resolution potential imaging technique of scanning Kelvin probe force microscopy (SKPFM). It was observed that the electric field is nonuniform across the i layer. It is much higher in the p/i region than in the middle and the n/i region, illustrating that the i layer is actually slightly n-type. A measurement on a nc-Si:H cell with a higher oxygen impurity concentration shows that the nonuniformity of the electric field is much more pronounced than in samples having a lower O impurity, indicating that O is an electron donor in nc-Si:H materials. This nonuniform distribution of electric field implies a mixture of diffusion and drift of carrier transport in the nc-Si:H solar cells. The composition and structure of these nc-Si:H cells were further investigated by using secondary-ion mass spectrometry and Raman spectroscopy, respectively. The effects of impurity and structural properties on the electrical potential distribution and solar cell performance are discussed.
  • Physical Description: 8 p.

Subject

  • Keyword: Valence Nc-Si:H
  • Keyword: Raman Spectroscopy
  • Keyword: Solar Cells
  • STI Subject Categories: 36 Materials Science
  • Keyword: Binding Energy
  • Keyword: Probes
  • Keyword: Diffusion
  • Keyword: Oxygen
  • Keyword: Microscopy
  • Keyword: Electrons
  • Keyword: Mass Spectroscopy
  • Keyword: Distribution
  • Keyword: Silicon
  • STI Subject Categories: 14 Solar Energy
  • Keyword: Silicon Solar Cells
  • Keyword: Transport
  • Keyword: Pv
  • Keyword: Hydrogenated Nanocrystalline Silicon
  • Keyword: Solar Energy - Photovoltaics
  • Keyword: Electrical Potential
  • Keyword: Nc-Si:H
  • Keyword: Electric Fields
  • Keyword: Mixtures
  • Keyword: Performance

Source

  • Conference: To be presented at the 2012 MRS Spring Meeting, 9-13 April 2012, San Francisco, California

Collection

  • Name: Office of Scientific & Technical Information Technical Reports
    Code: OSTI

Institution

  • Name: UNT Libraries Government Documents Department
    Code: UNTGD

Resource Type

  • Article

Format

  • Text

Identifier

  • Report No.: NREL/CP-5200-54833
  • Grant Number: AC36-08GO28308
  • Office of Scientific & Technical Information Report Number: 1043761
  • Archival Resource Key: ark:/67531/metadc843020
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