A new time-dependent analytic model for radiation-induced photocurrent in finite 1D epitaxial diodes. Page: 3 of 60
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SAND2012-2161
Unlimited Release
Printed April, 2012
A new time-dependent analytic model for
radiation-induced photocurrent in finite 1D epitaxial
diodes
Bert Kerr
Mathematics Department
New Mexico Institute of Mining and Technology
Socorro, NM 87801
Carl L. Axness
Advanced Systems Analysis Department
Charles E. Hembree
Radiation Effects Research Department
Jason C. Verley and Eric R. Keiter
Electrical Systems Modeling Department
Sandia National Laboratories
P.O. Box 5800
Albuquerque, NM 87185-1323
Abstract
Photocurrent generated by ionizing radiation represents a threat to microelectronics in ra-
diation environments. Circuit simulation tools such as SPICE [1] can be used to analyze these
threats, and typically rely on compact models for individual electrical components such as
transistors and diodes. Compact models consist of a handful of differential and/or algebraic
equations, and are derived by making simplifying assumptions to any of the many semicon-
ductor transport equations. Historically, many photocurrent compact models have suffered3
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Verley, Jason C.; Axness, Carl L.; Hembree, Charles Edward; Keiter, Eric Richard & Kerr, Bert (New Mexico Institute of Mining and Technology, Socorro, NM). A new time-dependent analytic model for radiation-induced photocurrent in finite 1D epitaxial diodes., report, April 1, 2012; United States. (https://digital.library.unt.edu/ark:/67531/metadc842020/m1/3/: accessed April 25, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.