Final report on LDRD project : narrow-linewidth VCSELs for atomic microsystems.

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Vertical-cavity surface-emitting lasers (VCSELs) are well suited for emerging photonic microsystems due to their low power consumption, ease of integration with other optical components, and single frequency operation. However, the typical VCSEL linewidth of 100 MHz is approximately ten times wider than the natural linewidth of atoms used in atomic beam clocks and trapped atom research, which degrades or completely destroys performance in those systems. This report documents our efforts to reduce VCSEL linewidths below 10 MHz to meet the needs of advanced sub-Doppler atomic microsystems, such as cold-atom traps. We have investigated two complementary approaches to reduce VCSEL linewidth: ... continued below

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34 p.

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Chow, Weng Wah; Geib, Kent Martin; Peake, Gregory Merwin & Serkland, Darwin Keith September 1, 2011.

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Description

Vertical-cavity surface-emitting lasers (VCSELs) are well suited for emerging photonic microsystems due to their low power consumption, ease of integration with other optical components, and single frequency operation. However, the typical VCSEL linewidth of 100 MHz is approximately ten times wider than the natural linewidth of atoms used in atomic beam clocks and trapped atom research, which degrades or completely destroys performance in those systems. This report documents our efforts to reduce VCSEL linewidths below 10 MHz to meet the needs of advanced sub-Doppler atomic microsystems, such as cold-atom traps. We have investigated two complementary approaches to reduce VCSEL linewidth: (A) increasing the laser-cavity quality factor, and (B) decreasing the linewidth enhancement factor (alpha) of the optical gain medium. We have developed two new VCSEL devices that achieved increased cavity quality factors: (1) all-semiconductor extended-cavity VCSELs, and (2) micro-external-cavity surface-emitting lasers (MECSELs). These new VCSEL devices have demonstrated linewidths below 10 MHz, and linewidths below 1 MHz seem feasible with further optimization.

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34 p.

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  • Report No.: SAND2011-7089
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/1029777 | External Link
  • Office of Scientific & Technical Information Report Number: 1029777
  • Archival Resource Key: ark:/67531/metadc836556

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • September 1, 2011

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  • May 19, 2016, 3:16 p.m.

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  • Nov. 28, 2016, 3:51 p.m.

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Chow, Weng Wah; Geib, Kent Martin; Peake, Gregory Merwin & Serkland, Darwin Keith. Final report on LDRD project : narrow-linewidth VCSELs for atomic microsystems., report, September 1, 2011; United States. (digital.library.unt.edu/ark:/67531/metadc836556/: accessed October 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.