High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

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A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating ... continued below

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Farrell, R.; Pagan, V. R.; Kabulski, A.; Kuchibhatl, Sridhar; Harman, J.; Kasarla, K. R. et al. May 1, 2008.

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Description

A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

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  • Report No.: NETL-TPR-2009
  • Grant Number: NONE
  • DOI: 10.2172/1015474 | External Link
  • Office of Scientific & Technical Information Report Number: 1015474
  • Archival Resource Key: ark:/67531/metadc836004

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  • May 1, 2008

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  • May 19, 2016, 3:16 p.m.

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  • Sept. 22, 2017, 6:05 p.m.

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Farrell, R.; Pagan, V. R.; Kabulski, A.; Kuchibhatl, Sridhar; Harman, J.; Kasarla, K. R. et al. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films, report, May 1, 2008; United States. (digital.library.unt.edu/ark:/67531/metadc836004/: accessed April 27, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.