Wide Bandgap Extrinsic Photoconductive Switches Metadata

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  • Main Title Wide Bandgap Extrinsic Photoconductive Switches


  • Author: Sullivan, J S
    Creator Type: Personal


  • Sponsor: United States. Department of Energy.
    Contributor Type: Organization


  • Name: Lawrence Livermore National Laboratory
    Place of Publication: Livermore, California
    Additional Info: Lawrence Livermore National Laboratory (LLNL), Livermore, CA


  • Creation: 2012-01-17


  • English


  • Content Description: Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.
  • Physical Description: PDF-file: 245 pages; size: 5.6 Mbytes


  • Keyword: Silicon Carbides
  • Keyword: Gallium Nitrides
  • Keyword: Saturation
  • Keyword: Photoconductivity
  • Keyword: Semiconductor Devices
  • Keyword: Electrodes
  • Keyword: Semiconductor Switches
  • STI Subject Categories: 36 Materials Science
  • Keyword: Switches
  • Keyword: Electric Fields
  • Keyword: Electrons
  • Keyword: Velocity
  • Keyword: Semiconductor Materials
  • Keyword: Monocrystals
  • Keyword: Substrates


  • Name: Office of Scientific & Technical Information Technical Reports
    Code: OSTI


  • Name: UNT Libraries Government Documents Department
    Code: UNTGD

Resource Type

  • Thesis or Dissertation


  • Text


  • Report No.: LLNL-TH-523591
  • Grant Number: W-7405-ENG-48
  • DOI: 10.2172/1034509
  • Office of Scientific & Technical Information Report Number: 1034509
  • Archival Resource Key: ark:/67531/metadc835750