Electronic Structure of CeFeAsO1-xFx (x=0, 0.11/x=0.12) compounds

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We report an extensive study on the intrinsic bulk electronic structure of the high-temperature superconductor CeFeAsO{sub 0.89}F{sub 0.11} and its parent compound CeFeAsO by soft and hard x-ray photoemission, x-ray absorption and soft-x-ray emission spectroscopies. The complementary surface/bulk probing depth, and the elemental and chemical sensitivity of these techniques allows resolving the intrinsic electronic structure of each element and correlating it with the local structure, which has been probed by extended-x-ray absorption fine structure spectroscopy. The measurements indicate a predominant 4f{sup 1} (i.e. Ce{sup 3+}) initial state configuration for Cerium and an effective valence-band-to-4f charge-transfer screening of the core hole. ... continued below

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Bondino, F.; Magnano, E.; Booth, C. H.; Offi, F.; Panaccione, G.; Malvestuto, M. et al. January 25, 2011.

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We report an extensive study on the intrinsic bulk electronic structure of the high-temperature superconductor CeFeAsO{sub 0.89}F{sub 0.11} and its parent compound CeFeAsO by soft and hard x-ray photoemission, x-ray absorption and soft-x-ray emission spectroscopies. The complementary surface/bulk probing depth, and the elemental and chemical sensitivity of these techniques allows resolving the intrinsic electronic structure of each element and correlating it with the local structure, which has been probed by extended-x-ray absorption fine structure spectroscopy. The measurements indicate a predominant 4f{sup 1} (i.e. Ce{sup 3+}) initial state configuration for Cerium and an effective valence-band-to-4f charge-transfer screening of the core hole. The spectra also reveal the presence of a small Ce f{sup 0} initial state configuration, which we assign to the occurrence of an intermediate valence state. The data reveal a reasonably good agreement with the partial density of states as obtained in standard density functional calculations over a large energy range. Implications for the electronic structure of these materials are discussed.

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  • Journal Name: Physical Review B; Journal Volume: 82

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  • Report No.: LBNL-4250E
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 1005172
  • Archival Resource Key: ark:/67531/metadc834953

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  • January 25, 2011

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  • May 19, 2016, 3:16 p.m.

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  • July 26, 2016, 5:42 p.m.

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Bondino, F.; Magnano, E.; Booth, C. H.; Offi, F.; Panaccione, G.; Malvestuto, M. et al. Electronic Structure of CeFeAsO1-xFx (x=0, 0.11/x=0.12) compounds, article, January 25, 2011; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc834953/: accessed October 16, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.