DEVELOPMENT OF CdZnTe RADIATION DETECTORS

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Cadmium Zinc Telluride (CdZnTe or CZT) is a very attractive material for room-temperature semiconductor detectors because of its wide band-gap and high atomic number. Despite these advantages, CZT still presents some material limitations and poor hole mobility. In the past decade most of the developing CZT detectors focused on designing different electrode configurations, mainly to minimize the deleterious effect due to the poor hole mobility. A few different electrode geometries were designed and fabricated, such as pixelated anodes and Frisch-grid detectors developed at Brookhaven National Lab (BNL). However, crystal defects in CZT materials still limit the yield of detector-grade crystals, ... continued below

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BOLOTNIKOV, A.; CAMARDA, G.; HOSSAIN, A.; KIM, K.H.; YANG, G.; GUL, R. et al. October 23, 2011.

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Cadmium Zinc Telluride (CdZnTe or CZT) is a very attractive material for room-temperature semiconductor detectors because of its wide band-gap and high atomic number. Despite these advantages, CZT still presents some material limitations and poor hole mobility. In the past decade most of the developing CZT detectors focused on designing different electrode configurations, mainly to minimize the deleterious effect due to the poor hole mobility. A few different electrode geometries were designed and fabricated, such as pixelated anodes and Frisch-grid detectors developed at Brookhaven National Lab (BNL). However, crystal defects in CZT materials still limit the yield of detector-grade crystals, and, in general, dominate the detector's performance. In the past few years, our group's research extended to characterizing the CZT materials at the micro-scale, and to correlating crystal defects with the detector's performance. We built a set of unique tools for this purpose, including infrared (IR) transmission microscopy, X-ray micro-scale mapping using synchrotron light source, X-ray transmission- and reflection-topography, current deep level transient spectroscopy (I-DLTS), and photoluminescence measurements. Our most recent work on CZT detectors was directed towards detailing various crystal defects, studying the internal electrical field, and delineating the effects of thermal annealing on improving the material properties. In this paper, we report our most recent results.

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  • 2011 IEEE Nuclear Science Symposium and Medical Imaging Conference (2011 NSS/MIC); Valencia, Spain; 20111023 through 20111029

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  • Report No.: BNL--96183-2011-CP
  • Grant Number: DE-AC02-98CH10886
  • Office of Scientific & Technical Information Report Number: 1029249
  • Archival Resource Key: ark:/67531/metadc834374

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  • October 23, 2011

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  • May 19, 2016, 3:16 p.m.

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  • Aug. 26, 2016, 4:19 p.m.

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BOLOTNIKOV, A.; CAMARDA, G.; HOSSAIN, A.; KIM, K.H.; YANG, G.; GUL, R. et al. DEVELOPMENT OF CdZnTe RADIATION DETECTORS, article, October 23, 2011; United States. (digital.library.unt.edu/ark:/67531/metadc834374/: accessed December 10, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.