Sources and transport systems for low energy extreme of ion implantation

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For the past seven years a joint research and development effort focusing on the design of steady state, intense ion sources has been in progress with the ultimate goal being to meet the two, energy extreme range needs of mega-electron-volt and 100's of electron-volt ion implanters. However, since the last Fortier is low energy ion implantation, focus of the endeavor has shifted to low energy ion implantation. For boron cluster source development, we started with molecular ions of decaborane (B{sub 10}H{sub 14}), octadecaborane (B{sub 18}H{sub 22}), and presently our focus is on carborane (C{sub 2}B{sub 10}H{sub 12}) ions developing methods ... continued below

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Hershcovitch, A.; Batalin, V.A.; Bugaev, A.S.; Gushenets, V.I.; Alexeyenko, O.; Gurkova, E. et al. June 6, 2010.

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For the past seven years a joint research and development effort focusing on the design of steady state, intense ion sources has been in progress with the ultimate goal being to meet the two, energy extreme range needs of mega-electron-volt and 100's of electron-volt ion implanters. However, since the last Fortier is low energy ion implantation, focus of the endeavor has shifted to low energy ion implantation. For boron cluster source development, we started with molecular ions of decaborane (B{sub 10}H{sub 14}), octadecaborane (B{sub 18}H{sub 22}), and presently our focus is on carborane (C{sub 2}B{sub 10}H{sub 12}) ions developing methods for mitigating graphite deposition. Simultaneously, we are developing a pure boron ion source (without a working gas) that can form the basis for a novel, more efficient, plasma immersion source. Our Calutron-Berna ion source was converted into a universal source capable of switching between generating molecular phosphorous P{sub 4}{sup +}, high charge state ions, as well as other types of ions. Additionally, we have developed transport systems capable of transporting a very large variety of ion species, and simulations of a novel gasless/plasmaless ion beam deceleration method were also performed.

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  • 18th International Conference on Ion Implantation Technology; Kyoto, Japan; 20100606 through 20100611

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  • Report No.: BNL--91302-2010-CP
  • Grant Number: DE-AC02-98CH10886
  • Office of Scientific & Technical Information Report Number: 1013495
  • Archival Resource Key: ark:/67531/metadc834233

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • June 6, 2010

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  • May 19, 2016, 3:16 p.m.

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  • Aug. 29, 2016, 3:40 p.m.

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Hershcovitch, A.; Batalin, V.A.; Bugaev, A.S.; Gushenets, V.I.; Alexeyenko, O.; Gurkova, E. et al. Sources and transport systems for low energy extreme of ion implantation, article, June 6, 2010; United States. (digital.library.unt.edu/ark:/67531/metadc834233/: accessed December 13, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.