Final Report

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The objective of this DOE SAI project is to demonstrate the feasibility of electrodeposited and solution-doped transparent conducting oxides (TCOs) such as zinc oxide with resistivity in the mid-10{sup -4} {Omega}-cm range. The target application is an 'on-top' TCO which can be deposited on semiconductors in thin-film and future solar cells including amorphous silicon, copper indium gallium selenide and emerging solar cells. There is no solution-prepared on-top TCO currently used in commercial solar cells. This project, if successful, will fill this gap. Our technical objectives include electrodeposited TCOs with (1) resistivity in the mid-10{sup -4} {Omega}-cm range, (2) post-deposition annealing ... continued below

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Tao, Dr. Meng December 22, 2010.

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Description

The objective of this DOE SAI project is to demonstrate the feasibility of electrodeposited and solution-doped transparent conducting oxides (TCOs) such as zinc oxide with resistivity in the mid-10{sup -4} {Omega}-cm range. The target application is an 'on-top' TCO which can be deposited on semiconductors in thin-film and future solar cells including amorphous silicon, copper indium gallium selenide and emerging solar cells. There is no solution-prepared on-top TCO currently used in commercial solar cells. This project, if successful, will fill this gap. Our technical objectives include electrodeposited TCOs with (1) resistivity in the mid-10{sup -4} {Omega}-cm range, (2) post-deposition annealing below 300 C and (3) no-vacuum processing or low-vacuum processing. All the three research objectives listed above have been accomplished in the 14-month period from July 1, 2009 through September 30, 2010. The most noticeable accomplishments of this project are (1) identification of a terawatt-scale dopant for zinc oxide, i.e. yttrium, whose known reserve is enough for 60 peak terawatts of thin-film solar cells; (2) demonstration of a record-low resistivity, 6.3 x 10{sup -5} {Omega}-cm, in solution-deposited zinc oxide with an abundant dopant; and (3) the record-low resistivity was accomplished with a maximum process temperature of 300 C and without vacuum annealing. Industrial applications of the new yttrium-doped zinc oxide are being pursued, including (1) green deposition of yttrium-doped zinc oxide to reduce water consumption during deposition and (2) search for an industrial partner to develop an electrochemical tool for large-area uniform deposition of yttrium-doped zinc oxide.

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  • Report No.: DE-EE0000577
  • Grant Number: EE0000577
  • DOI: 10.2172/1000525 | External Link
  • Office of Scientific & Technical Information Report Number: 1000525
  • Archival Resource Key: ark:/67531/metadc833903

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Office of Scientific & Technical Information Technical Reports

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  • December 22, 2010

Added to The UNT Digital Library

  • May 19, 2016, 3:16 p.m.

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  • Dec. 7, 2016, 11:35 a.m.

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Tao, Dr. Meng. Final Report, report, December 22, 2010; United States. (digital.library.unt.edu/ark:/67531/metadc833903/: accessed November 18, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.