Effect of DC voltage pulses on memristor behavior.

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Description

Current knowledge of memristor behavior is limited to a few physical models of which little comprehensive data collection has taken place. The purpose of this research is to collect data in search of exploitable memristor behavior by designing and implementing tests on a HP Labs Rev2 Memristor Test Board. The results are then graphed in their optimal format for conceptualizing behavioral patterns. This series of experiments has concluded the existence of an additional memristor state affecting the behavior of memristors when pulsed with positively polarized DC voltages. This effect has been observed across multiple memristors and data sets. The following ... continued below

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23 p.

Creation Information

Evans, Brian R. October 1, 2013.

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This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this report can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Current knowledge of memristor behavior is limited to a few physical models of which little comprehensive data collection has taken place. The purpose of this research is to collect data in search of exploitable memristor behavior by designing and implementing tests on a HP Labs Rev2 Memristor Test Board. The results are then graphed in their optimal format for conceptualizing behavioral patterns. This series of experiments has concluded the existence of an additional memristor state affecting the behavior of memristors when pulsed with positively polarized DC voltages. This effect has been observed across multiple memristors and data sets. The following pages outline the process that led to the hypothetical existence and eventual proof of this additional state of memristor behavior.

Physical Description

23 p.

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  • Report No.: SAND2013-8596
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 1096951
  • Archival Resource Key: ark:/67531/metadc832796

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Creation Date

  • October 1, 2013

Added to The UNT Digital Library

  • May 19, 2016, 9:45 a.m.

Description Last Updated

  • June 17, 2016, 7:53 p.m.

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Evans, Brian R. Effect of DC voltage pulses on memristor behavior., report, October 1, 2013; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc832796/: accessed September 24, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.