High Efficiency Single Crystal CdTe Solar Cells: November 19, 2009 - January 31, 2011

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The goal of the program was to develop single crystal CdTe-based top cells grown on Si solar cells as a platform for the subsequent manufacture of high efficiency tandem cells for CPV applications. The keys to both the single junction and the tandem junction cell architectures are the ability to grow high quality single-crystal CdTe and CdZnTe layers on p-type Si substrates, to dope the CdTe and CdZnTe controllably, both n and p-type, and to make low resistance ohmic front and back contacts. EPIR demonstrated the consistent MBE growth of CdTe/Si and CdZnTe/Si having high crystalline quality despite very large ... continued below

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47 pp.

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Carmody, M. & Gilmore, A. May 1, 2011.

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Description

The goal of the program was to develop single crystal CdTe-based top cells grown on Si solar cells as a platform for the subsequent manufacture of high efficiency tandem cells for CPV applications. The keys to both the single junction and the tandem junction cell architectures are the ability to grow high quality single-crystal CdTe and CdZnTe layers on p-type Si substrates, to dope the CdTe and CdZnTe controllably, both n and p-type, and to make low resistance ohmic front and back contacts. EPIR demonstrated the consistent MBE growth of CdTe/Si and CdZnTe/Si having high crystalline quality despite very large lattice mismatches; epitaxial CdTe/Si and CdZnTe/Si consistently showed state-of-the-art electron mobilities and good hole mobilities; bulk minority carrier recombination lifetimes of unintentionally p-doped CdTe and CdZnTe grown by MBE on Si were demonstrated to be consistently of order 100 ns or longer; desired n- and p-doping levels were achieved; solar cell series specific resistances <10 ?-cm2 were achieved; A single-junction solar cell having a state-of-the-art value of Voc and a unverified 16.4% efficiency was fabricated from CdZnTe having a 1.80 eV bandgap, ideal for the top junction in a tandem cell with a Si bottom junction.

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47 pp.

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  • Related Information: Work performed by EPIR Technologies, Bolingbrook, Illinois

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  • Report No.: NREL/SR-5200-51380
  • Grant Number: AC36-08GO28308
  • DOI: 10.2172/1013904 | External Link
  • Office of Scientific & Technical Information Report Number: 1013904
  • Archival Resource Key: ark:/67531/metadc831160

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • May 1, 2011

Added to The UNT Digital Library

  • May 19, 2016, 3:16 p.m.

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  • Dec. 5, 2016, 7:28 p.m.

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Carmody, M. & Gilmore, A. High Efficiency Single Crystal CdTe Solar Cells: November 19, 2009 - January 31, 2011, report, May 1, 2011; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc831160/: accessed April 20, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.