Thin Silicon MEMS Contact-Stress Sensor

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Description

This thin, MEMS contact-stress (CS) sensor continuously and accurately measures time-varying, solid interface loads in embedded systems over tens of thousands of load cycles. Unlike all other interface load sensors, the CS sensor is extremely thin (< 150 {micro}m), provides accurate, high-speed measurements, and exhibits good stability over time with no loss of calibration with load cycling. The silicon CS sensor, 5 mm{sup 2} and 65 {micro}m thick, has piezoresistive traces doped within a load-sensitive diaphragm. The novel package utilizes several layers of flexible polyimide to mechanically and electrically isolate the sensor from the environment, transmit normal applied loads to ... continued below

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6 p. (0.3 MB)

Creation Information

Kotovsky, J; Tooker, A & Horsley, D March 22, 2010.

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Description

This thin, MEMS contact-stress (CS) sensor continuously and accurately measures time-varying, solid interface loads in embedded systems over tens of thousands of load cycles. Unlike all other interface load sensors, the CS sensor is extremely thin (< 150 {micro}m), provides accurate, high-speed measurements, and exhibits good stability over time with no loss of calibration with load cycling. The silicon CS sensor, 5 mm{sup 2} and 65 {micro}m thick, has piezoresistive traces doped within a load-sensitive diaphragm. The novel package utilizes several layers of flexible polyimide to mechanically and electrically isolate the sensor from the environment, transmit normal applied loads to the diaphragm, and maintain uniform thickness. The CS sensors have a highly linear output in the load range tested (0-2.4 MPa) with an average accuracy of {+-} 1.5%.

Physical Description

6 p. (0.3 MB)

Notes

PDF-file: 6 pages; size: 0.3 Mbytes

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  • Presented at: Hilton Head Solid-State Sensors, Actuators, and Microsystems Workshop 2010, Hilton Head, SC, United States, Jun 06 - Jun 10, 2010

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  • Report No.: LLNL-PROC-427227
  • Grant Number: W-7405-ENG-48
  • Office of Scientific & Technical Information Report Number: 1009206
  • Archival Resource Key: ark:/67531/metadc829453

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Creation Date

  • March 22, 2010

Added to The UNT Digital Library

  • May 19, 2016, 3:16 p.m.

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  • April 13, 2017, 6:23 p.m.

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Kotovsky, J; Tooker, A & Horsley, D. Thin Silicon MEMS Contact-Stress Sensor, article, March 22, 2010; Livermore, California. (digital.library.unt.edu/ark:/67531/metadc829453/: accessed August 19, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.