We demonstrate a technique to nanofabricate nitrogen vacancy (NV) centers in diamond based on broad-beam nitrogen implantation through apertures in electron beam lithography resist. This method enables high-throughput nanofabrication of single NV centers on sub-100-nm length scales. Secondary ion mass spectroscopy measurements facilitate depth profiling of the implanted nitrogen to provide three-dimensional characterization of the NV center spatial distribution. Measurements of NV center coherence with on-chip coplanar waveguides suggest a pathway for incorporating this scalable nanofabrication technique in future quantum applications.
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Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (United States)
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Berkeley, California
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We demonstrate a technique to nanofabricate nitrogen vacancy (NV) centers in diamond based on broad-beam nitrogen implantation through apertures in electron beam lithography resist. This method enables high-throughput nanofabrication of single NV centers on sub-100-nm length scales. Secondary ion mass spectroscopy measurements facilitate depth profiling of the implanted nitrogen to provide three-dimensional characterization of the NV center spatial distribution. Measurements of NV center coherence with on-chip coplanar waveguides suggest a pathway for incorporating this scalable nanofabrication technique in future quantum applications.
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Toyli, David M.; Weis, Christoph D.; Fuchs, D.; Schenkel, Thomas & Awschalom, David D.Chip-Scale Nanofabrication of Single Spins and Spin Arrays in Diamond,
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July 2, 2010;
Berkeley, California.
(digital.library.unt.edu/ark:/67531/metadc829065/:
accessed April 26, 2018),
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