Novel Neo-Pentoxide Precursors for MOCVD Thin Films of TiO(2) and ZrO(2).[1]

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Two novel Group IV precursors, titanium (IV) neo-pentoxide, [Ti({mu}-ONep)(ONep){sub 3}]{sub 2} (l), and zirconium (IV) neo-pentoxide, [Zr({mu}-ONep)(ONep){sub 3}]{sub 2} (2), were reported to possess relatively high volatility at low temperatures. These compounds were therefore investigated as MOCVD precursors using a lamp-heated cold-wall CVD reactor and direct sublimation without carrier gas. The ONep derivatives proved to be competitive precursors for the production of thin films of the appropriate MO{sub 2} (M = Ti or Zr) materials in comparison to other metallo-organic precursors. Compound 1 was found to sublime at 120 C with a deposition rate of {approximately}0.350 {mu}m/min onto a substrate ... continued below

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22 p.

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Boyle, Timothy J.; Francisco, Laila P.; Gallegos, Jesus J.; Rodriguez, Mark A. & Ward, Timothy L. July 14, 1999.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 13 times . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Two novel Group IV precursors, titanium (IV) neo-pentoxide, [Ti({mu}-ONep)(ONep){sub 3}]{sub 2} (l), and zirconium (IV) neo-pentoxide, [Zr({mu}-ONep)(ONep){sub 3}]{sub 2} (2), were reported to possess relatively high volatility at low temperatures. These compounds were therefore investigated as MOCVD precursors using a lamp-heated cold-wall CVD reactor and direct sublimation without carrier gas. The ONep derivatives proved to be competitive precursors for the production of thin films of the appropriate MO{sub 2} (M = Ti or Zr) materials in comparison to other metallo-organic precursors. Compound 1 was found to sublime at 120 C with a deposition rate of {approximately}0.350 {mu}m/min onto a substrate at 330 C forming the anatase phase with < 1% residual C found in the final film. Compound 2 was found to sublime at 160 C and deposited as crystalline material at 300 C with < 1% residual C found in the final film. A comparison to standard alkoxide and {beta}-diketonates is presented where appropriate.

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22 p.

Notes

OSTI as DE00009023

Medium: P; Size: 22 pages

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  • Journal Name: Advance Materials Chemical Vapor Deposition; Other Information: Submitted to Advance Materials Chemical Vapor Deposition

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  • Report No.: SAND99-1782J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 9023
  • Archival Resource Key: ark:/67531/metadc794908

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  • July 14, 1999

Added to The UNT Digital Library

  • Dec. 19, 2015, 7:14 p.m.

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  • April 10, 2017, 3:16 p.m.

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Boyle, Timothy J.; Francisco, Laila P.; Gallegos, Jesus J.; Rodriguez, Mark A. & Ward, Timothy L. Novel Neo-Pentoxide Precursors for MOCVD Thin Films of TiO(2) and ZrO(2).[1], article, July 14, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc794908/: accessed June 24, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.