Doped Contacts for High-Longevity Optically Activated, High Gain GaAs Photoconductive Semiconductor Switches

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The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 50 million pulses. This was achieved by improving the ohmic contacts through the incorporation of a doped layer beneath the PCSS contacts which is very effective in the suppression of filament formation and alleviating current crowding to improve the longevity of PCSS. Virtually indefinite, damage-free operation is now possible at much higher current levels than before. The inherent damage-free current capacity of the switch depends on the thickness of the doped layers and is at least 100A for a dopant diffusion depth of 4pm. The ... continued below

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4 p.

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Baca, A.G.; Brown, D.J.; Donaldson, R.D.; Helgeson, W.D.; Hjalmarson, H.P.; Loubriel, G.M. et al. August 5, 1999.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 50 million pulses. This was achieved by improving the ohmic contacts through the incorporation of a doped layer beneath the PCSS contacts which is very effective in the suppression of filament formation and alleviating current crowding to improve the longevity of PCSS. Virtually indefinite, damage-free operation is now possible at much higher current levels than before. The inherent damage-free current capacity of the switch depends on the thickness of the doped layers and is at least 100A for a dopant diffusion depth of 4pm. The contact metal has a different damage mechanism and the threshold for damage ({approximately}40A) is not further improved beyond a dopant diffusion depth of about 2{micro}m. In a diffusion-doped contact switch, the switching performance is not degraded when contact metal erosion occurs. This paper will compare thermal diffusion and epitaxial growth as approaches to doping the contacts. These techniques will be contrasted in terms of the fabrication issues and device characteristics.

Physical Description

4 p.

Notes

OSTI as DE00009698

Medium: P; Size: 4 pages

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  • 1999 Pulsed Power Conference, Monterey, CA (US), 06/27/1999--07/01/1999

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  • Report No.: SAND99-2051C
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 9698
  • Archival Resource Key: ark:/67531/metadc794665

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  • August 5, 1999

Added to The UNT Digital Library

  • Dec. 19, 2015, 7:14 p.m.

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  • April 10, 2017, 7:51 p.m.

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Baca, A.G.; Brown, D.J.; Donaldson, R.D.; Helgeson, W.D.; Hjalmarson, H.P.; Loubriel, G.M. et al. Doped Contacts for High-Longevity Optically Activated, High Gain GaAs Photoconductive Semiconductor Switches, article, August 5, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc794665/: accessed October 23, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.