Highly-Efficient Laser with Self-Aligned Waveguide and Current Confinement by Selective Oxidation

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We report highly efficient, low-threshold-current edge-emitting lasers where both the optical waveguide and lateral current confinement are achieved by lateral selective oxidation of AlGaAs. External differential quantum efficiency in excess of 95% and 40% wall-plug efficiency are demonstrated in 600 {micro}m-long devices without facet coatings. Shorter, 300-{micro}m-long, uncoated devices have <6 mA threshold currents. This high-performance is a combined result of placement of the oxide layers so as to achieve the minimum optical mode volume and bi-parabolic grading of the Al{sub x}Ga{sub 1{minus}x}As heteroepitaxy for minimum height/potential barriers, less than 15 meV, created by the wide-energy-gap layers required for selective ... continued below

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2 p.

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Allerman, A.; Blum, O.; Gao, Y. & Vawter, G.A. July 27, 1999.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

We report highly efficient, low-threshold-current edge-emitting lasers where both the optical waveguide and lateral current confinement are achieved by lateral selective oxidation of AlGaAs. External differential quantum efficiency in excess of 95% and 40% wall-plug efficiency are demonstrated in 600 {micro}m-long devices without facet coatings. Shorter, 300-{micro}m-long, uncoated devices have <6 mA threshold currents. This high-performance is a combined result of placement of the oxide layers so as to achieve the minimum optical mode volume and bi-parabolic grading of the Al{sub x}Ga{sub 1{minus}x}As heteroepitaxy for minimum height/potential barriers, less than 15 meV, created by the wide-energy-gap layers required for selective wet oxidation. Since the initial development of wet AlGaAs oxidation methods, a number of oxidized edge-emitting laser concepts have been tried. The most successful of these have used lateral selective oxidation of AlGaAs layers between 100 and 300 nm thickness. These layers have been used as current restricting apertures or for both current restriction and lateral waveguiding. Use of an oxide layer above and below the laser active region offers the ability to create a self-aligned waveguide with current apertures on both sides of the pn-junction in a process requiring only one epitaxial growth step. Previous use apertures for these dual purposes resulted multi-moded lasers with reduced efficiency and elevated threshold current density due to non-ideal formation of the waveguide and possibly excess stress caused by the thick (300 nm) oxide layer.

Physical Description

2 p.

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OSTI as DE00009673

Medium: P; Size: 2 pages

Source

  • LEOS'99 Annual Meeting, San Francisco, CA (US), 11/08/1999--11/11/1999

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  • Report No.: SAND99-1967C
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 9673
  • Archival Resource Key: ark:/67531/metadc794445

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Creation Date

  • July 27, 1999

Added to The UNT Digital Library

  • Dec. 19, 2015, 7:14 p.m.

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  • April 10, 2017, 3:01 p.m.

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Allerman, A.; Blum, O.; Gao, Y. & Vawter, G.A. Highly-Efficient Laser with Self-Aligned Waveguide and Current Confinement by Selective Oxidation, article, July 27, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc794445/: accessed April 26, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.