InGaAsN: A Novel Material for High-Efficiency Solar Cells and Advanced Photonic Devices

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Description

This report represents the completion of a 6 month Laboratory-Directed Research and Development (LDRD) program that focused on research and development of novel compound semiconductor, InGaAsN. This project seeks to rapidly assess the potential of InGaAsN for improved high-efficiency photovoltaic. Due to the short time scale, the project focused on quickly investigating the range of attainable compositions and bandgaps while identifying possible material limitations for photovoltaic devices. InGaAsN is a new semiconductor alloy system with the remarkable property that the inclusion of only 2% nitrogen reduces the bandgap by more than 30%. In order to help understand the physical origin ... continued below

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35 p.

Creation Information

Allerman, Andrew A.; Follstaedt, David M.; Gee, James M.; Jones, Eric D.; Kurtz, Steven R. & Modine, Norman A. July 1, 1999.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

This report represents the completion of a 6 month Laboratory-Directed Research and Development (LDRD) program that focused on research and development of novel compound semiconductor, InGaAsN. This project seeks to rapidly assess the potential of InGaAsN for improved high-efficiency photovoltaic. Due to the short time scale, the project focused on quickly investigating the range of attainable compositions and bandgaps while identifying possible material limitations for photovoltaic devices. InGaAsN is a new semiconductor alloy system with the remarkable property that the inclusion of only 2% nitrogen reduces the bandgap by more than 30%. In order to help understand the physical origin of this extreme deviation from the typically observed nearly linear dependence of alloy properties on concentration, we have investigated the pressure dependence of the excited state energies using both experimental and theoretical methods. We report measurements of the low temperature photoluminescence energy of the material for pressures between ambient and 110 kbar. We describe a simple, density-functional-theory-based approach to calculating the pressure dependence of low lying excitation energies for low concentration alloys. The theoretically predicted pressure dependence of the bandgap is in excellent agreement with the experimental data. Based on the results of our calculations, we suggest an explanation for the strongly non-linear pressure dependence of the bandgap that, surprisingly, does not involve a nitrogen impurity band. Additionally, conduction-band mass measurements, measured by three different techniques, will be described and finally, the magnetoluminescence determined pressure coefficient for the conduction-band mass is measured. The design, growth by metal-organic chemical vapor deposition, and processing of an In{sub 0.07}Ga{sub 0.93}As{sub 0.98}N{sub 0.02} solar cell, with 1.0 eV bandgap, lattice matched to GaAs is described. The hole diffusion length in annealed, n-type InGaAsN is 0.6-0.8 pm, and solar cell internal quantum efficiencies >70% are obtained. Optical studies indicate that defects or impurities, from doping and nitrogen incorporation, limit cell performance.

Physical Description

35 p.

Notes

OSTI as DE00008861

Medium: P; Size: 35 pages

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  • Other Information: PBD: 1 Jul 1999

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  • Report No.: SAND99-0922
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/8861 | External Link
  • Office of Scientific & Technical Information Report Number: 8861
  • Archival Resource Key: ark:/67531/metadc794374

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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Creation Date

  • July 1, 1999

Added to The UNT Digital Library

  • Dec. 19, 2015, 7:14 p.m.

Description Last Updated

  • April 12, 2017, 1:47 p.m.

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Allerman, Andrew A.; Follstaedt, David M.; Gee, James M.; Jones, Eric D.; Kurtz, Steven R. & Modine, Norman A. InGaAsN: A Novel Material for High-Efficiency Solar Cells and Advanced Photonic Devices, report, July 1, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc794374/: accessed January 18, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.