Copper electroplating process for sub-half-micron ULSI structures

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We have utilized electroplating technology in a damascene process to produce low resistance copper interconnects in sub-half-micron ULSI patterns having aspect ratios of 2.4:1. The use of a pulsed-voltage plating technique allows trench filling capability without voids. Samples of 150 mm diameter were patterned and sputtered with a barrier layer, followed by a copper seed layer. Pulsed-voltage electroplating, deposited about 2 microns of copper uniformly (1 sigma < 5%) over the surface. The electroplated copper has low levels of impurities, excellent adhesion, excellent step coverage, and rates comparable to other deposition methods. We present details of the electroplating equipment, and ... continued below

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9 p.

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Contolini, R.J.; Tarte, L.; Graff, R.T.; Evans, L.B.; Cox, J.N.; Puich, M.R. et al. May 15, 1995.

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We have utilized electroplating technology in a damascene process to produce low resistance copper interconnects in sub-half-micron ULSI patterns having aspect ratios of 2.4:1. The use of a pulsed-voltage plating technique allows trench filling capability without voids. Samples of 150 mm diameter were patterned and sputtered with a barrier layer, followed by a copper seed layer. Pulsed-voltage electroplating, deposited about 2 microns of copper uniformly (1 sigma < 5%) over the surface. The electroplated copper has low levels of impurities, excellent adhesion, excellent step coverage, and rates comparable to other deposition methods. We present details of the electroplating equipment, and data on the filling characteristics of the copper metallization which prevent void formation and reduce contact resistance.

Physical Description

9 p.

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OSTI as DE95014674

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  • Very large scale integration multilevel interconnection conference, Santa Clara, CA (United States), 27-28 Jun 1995

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  • Other: DE95014674
  • Report No.: UCRL-JC--119725
  • Report No.: CONF-9506206--1
  • Grant Number: W-7405-ENG-48
  • Office of Scientific & Technical Information Report Number: 90406
  • Archival Resource Key: ark:/67531/metadc794262

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  • May 15, 1995

Added to The UNT Digital Library

  • Dec. 19, 2015, 7:14 p.m.

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  • Feb. 16, 2016, 6:09 p.m.

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Contolini, R.J.; Tarte, L.; Graff, R.T.; Evans, L.B.; Cox, J.N.; Puich, M.R. et al. Copper electroplating process for sub-half-micron ULSI structures, article, May 15, 1995; California. (digital.library.unt.edu/ark:/67531/metadc794262/: accessed September 24, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.