Non-invasive current and voltage imaging techniques for integrated circuits using scanning probe microscopy. Final report, LDRD Project FY93 and FY94

One of 46 reports in the series: Fiscal Year 1994 available on this site.

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Description

This report describes the first practical, non-invasive technique for detecting and imaging currents internal to operating integrated circuits (ICs). This technique is based on magnetic force microscopy and was developed under Sandia National Laboratories` LDRD (Laboratory Directed Research and Development) program during FY 93 and FY 94. LDRD funds were also used to explore a related technique, charge force microscopy, for voltage probing of ICs. This report describes the technical work performed under this LDRD as well as the outcomes of the project in terms of publications and awards, intellectual property and licensing, synergistic work, potential future work, hiring of ... continued below

Physical Description

37 p.

Creation Information

Campbell, A.N.; Cole, E.I. Jr. & Tangyunyong, Paiboon June 1, 1995.

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This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this report can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Titles

  • Main Title: Non-invasive current and voltage imaging techniques for integrated circuits using scanning probe microscopy. Final report, LDRD Project FY93 and FY94
  • Series Title: Fiscal Year 1994

Description

This report describes the first practical, non-invasive technique for detecting and imaging currents internal to operating integrated circuits (ICs). This technique is based on magnetic force microscopy and was developed under Sandia National Laboratories` LDRD (Laboratory Directed Research and Development) program during FY 93 and FY 94. LDRD funds were also used to explore a related technique, charge force microscopy, for voltage probing of ICs. This report describes the technical work performed under this LDRD as well as the outcomes of the project in terms of publications and awards, intellectual property and licensing, synergistic work, potential future work, hiring of additional permanent staff, and benefits to DOE`s defense programs (DP).

Physical Description

37 p.

Notes

OSTI as DE95013857

Source

  • Other Information: PBD: Jun 1995

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Identifier

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  • Other: DE95013857
  • Report No.: SAND--95-0758
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/93674 | External Link
  • Office of Scientific & Technical Information Report Number: 93674
  • Archival Resource Key: ark:/67531/metadc794182

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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Creation Date

  • June 1, 1995

Added to The UNT Digital Library

  • Dec. 19, 2015, 7:14 p.m.

Description Last Updated

  • Oct. 20, 2016, 1:29 p.m.

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Campbell, A.N.; Cole, E.I. Jr. & Tangyunyong, Paiboon. Non-invasive current and voltage imaging techniques for integrated circuits using scanning probe microscopy. Final report, LDRD Project FY93 and FY94, report, June 1, 1995; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc794182/: accessed April 20, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.