BUSFET - A Novel Radiation-Hardened SOI Transistor

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The total-dose hardness of SOI technology is limited by radiation-induced charge trapping in gate, field, and SOI buried oxides. Charge trapping in the buried oxide can lead to back-channel leakage and makes hardening SOI transistors more challenging than hardening bulk-silicon transistors. Two avenues for hardening the back-channel are (1) to use specially prepared SOI buried oxides that reduce the net amount of trapped positive charge or (2) to design transistors that are less sensitive to the effects of trapped charge in the buried oxide. In this work, we propose a new partially-depleted SOI transistor structure that we call the BUSFET--Body ... continued below

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7 p.

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Schwank, J.R.; Shaneyfelt, M.R.; Draper, B.L. & Dodd, P.E. July 20, 1999.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The total-dose hardness of SOI technology is limited by radiation-induced charge trapping in gate, field, and SOI buried oxides. Charge trapping in the buried oxide can lead to back-channel leakage and makes hardening SOI transistors more challenging than hardening bulk-silicon transistors. Two avenues for hardening the back-channel are (1) to use specially prepared SOI buried oxides that reduce the net amount of trapped positive charge or (2) to design transistors that are less sensitive to the effects of trapped charge in the buried oxide. In this work, we propose a new partially-depleted SOI transistor structure that we call the BUSFET--Body Under Source FET. The BUSFET utilizes a shallow source and a deep drain. As a result, the silicon depletion region at the back channel caused by radiation-induced charge trapping in the buried oxide does not form a conducting path between source and drain. Thus, the BUSFET structure design can significantly reduce radiation-induced back-channel leakage without using specially prepared buried oxides. Total dose hardness is achieved without degrading the intrinsic SEU and dose rate hardness of SOI technology. The effectiveness of the BUSFET structure for reducing total-dose back-channel leakage depends on several variables, including the top silicon film thickness and doping concentration and the depth of the source. 3-D simulations show that for a doping concentration of 10{sup 18} cm{sup {minus}3} and a source depth of 90 nm, a silicon film thickness of 180 nm is sufficient to almost completely eliminate radiation-induced back-channel leakage. However, for a doping concentration of 3x10{sup 17} cm{sup {minus}3}, a thicker silicon film (300 nm) must be used.

Physical Description

7 p.

Notes

INIS; OSTI as DE00009468

Medium: P; Size: 7 pages

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  • Journal Name: IEEE Transactions on Nuclear Science; Other Information: Submitted to IEEE Transactions on Nuclear Science

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  • Report No.: SAND99-0323J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 9468
  • Archival Resource Key: ark:/67531/metadc793878

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  • July 20, 1999

Added to The UNT Digital Library

  • Dec. 19, 2015, 7:14 p.m.

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  • April 11, 2017, 3:08 p.m.

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Schwank, J.R.; Shaneyfelt, M.R.; Draper, B.L. & Dodd, P.E. BUSFET - A Novel Radiation-Hardened SOI Transistor, article, July 20, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc793878/: accessed August 21, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.