Photoconducting ultraviolet detectors based on GaN films grown by electron cyclotron resonance molecular beam epitaxy

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We report for the first time, fabrication of photoconducting UV detectors made from GaN films grown by molecular beam epitaxy. Semi-instilating GaN films were grown by the method of electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-MBE). Photoconductive devices with interdigitated electrodes were fabricated and their photoconducting properties were investigated. In this paper we report on the performance of the detectors in terms of UV responsivity, gain-quantum efficiency product, spectral response and response time. We have measured responsivity of 125A/W and gain-quantum efficiency product of 600 at 254nm and 25V. The response time was measured to be on the ... continued below

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9 p.

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Misra, M.; Shah, K.S.; Moustakas, T.D.; Vaudo, R.P. & Singh, R. August 1, 1995.

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We report for the first time, fabrication of photoconducting UV detectors made from GaN films grown by molecular beam epitaxy. Semi-instilating GaN films were grown by the method of electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-MBE). Photoconductive devices with interdigitated electrodes were fabricated and their photoconducting properties were investigated. In this paper we report on the performance of the detectors in terms of UV responsivity, gain-quantum efficiency product, spectral response and response time. We have measured responsivity of 125A/W and gain-quantum efficiency product of 600 at 254nm and 25V. The response time was measured to be on the order of 20ns for our detectors, corresponding to a bandwidth of 25Mhz. The spectral response showed a sharp long-wavelength cutoff at 365nm, and remained constant in the 200nm to 365nm range. The response of the detectors to low-energy x-rays was measured and found to be linear for x-rays with energies ranging from 60kVp to 90kVp.

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9 p.

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OSTI as DE95015149

Medium: P; Size: 9 p.

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  • 40. annual meeting of the Society of Photo-Optical Instrumentation Engineers, San Diego, CA (United States), 9-14 Jul 1995

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  • Other: DE95015149
  • Report No.: CONF-950793--7
  • Grant Number: FG02-94ER81843
  • Office of Scientific & Technical Information Report Number: 95356
  • Archival Resource Key: ark:/67531/metadc793161

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  • August 1, 1995

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  • Dec. 19, 2015, 7:14 p.m.

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  • April 13, 2017, 2:56 p.m.

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Misra, M.; Shah, K.S.; Moustakas, T.D.; Vaudo, R.P. & Singh, R. Photoconducting ultraviolet detectors based on GaN films grown by electron cyclotron resonance molecular beam epitaxy, article, August 1, 1995; United States. (digital.library.unt.edu/ark:/67531/metadc793161/: accessed December 12, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.