Mechanism of electromigration failure in Al thin film interconnects containing Sc

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In order to understand the role of Sc on electromigration (EM) failure, Al interconnects with 0.1 and 0.3 wt.% Sc sere tested as a function of post-pattern annealing time. In response to the evolution of the line structure, the statistics of lifetime evolved. While the addition of Sc greatly reduces the rate of evolution of the failure statistics because the grain growth rate decreases, the MTF variation was found to be very similar to that of pure Al. These observations seem to show that Sc has little influence on the kinetics of Al EM; however, it has some influence on ... continued below

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8 p.

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Kim, Choong-un; Kang, S.H.; Morris, J.W. Jr. & Genin, F.Y. May 1, 1995.

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In order to understand the role of Sc on electromigration (EM) failure, Al interconnects with 0.1 and 0.3 wt.% Sc sere tested as a function of post-pattern annealing time. In response to the evolution of the line structure, the statistics of lifetime evolved. While the addition of Sc greatly reduces the rate of evolution of the failure statistics because the grain growth rate decreases, the MTF variation was found to be very similar to that of pure Al. These observations seem to show that Sc has little influence on the kinetics of Al EM; however, it has some influence on the EM resistance of the line since it is an efficient grain refiner. Unlike Cu in Al, Sc does not seem to migrate, which may explain its lack of influence on the kinetics of Al EM.

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8 p.

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OSTI as DE95015880

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  • Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 17-21 Apr 1995

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  • Other: DE95015880
  • Report No.: UCRL-JC--120337
  • Report No.: CONF-950412--33
  • Grant Number: W-7405-ENG-48;AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 95315
  • Archival Resource Key: ark:/67531/metadc792649

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  • May 1, 1995

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  • Dec. 19, 2015, 7:14 p.m.

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  • Feb. 17, 2016, 2:21 p.m.

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Kim, Choong-un; Kang, S.H.; Morris, J.W. Jr. & Genin, F.Y. Mechanism of electromigration failure in Al thin film interconnects containing Sc, article, May 1, 1995; California. (digital.library.unt.edu/ark:/67531/metadc792649/: accessed September 21, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.