Identification of Yield-Limiting Defects in a 0.5 Micron, Shallow Trench Isolation Technology

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During the development and qualification of a radiation-hardened, 0.5 {micro}m shallow trench isolation technology, several yield-limiting defects were observed. The 256K (32K x 8) static-random access memories (SRAMs) used as a technology characterization vehicle had elevated power supply current during wafer probe testing. Many of the die sites were functional, but exhibited quiescent power supply current (I{sub DDQ}) in excess of 100 {micro}A, the present limit for this particular SRAM. Initial electrical analysis indicated that many of the die sites exhibited unstable I{sub DDQ} that fluctuated rapidly. We refer to this condition as ''jitter.'' The I{sub DDQ} jitter appeared to ... continued below

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8 p.

Creation Information

Draper, Bruce L.; Headley, Thomas J.; Hembree, Charles E.; Henderson, Christopher L. & Soden, Jerry M. August 2, 1999.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

During the development and qualification of a radiation-hardened, 0.5 {micro}m shallow trench isolation technology, several yield-limiting defects were observed. The 256K (32K x 8) static-random access memories (SRAMs) used as a technology characterization vehicle had elevated power supply current during wafer probe testing. Many of the die sites were functional, but exhibited quiescent power supply current (I{sub DDQ}) in excess of 100 {micro}A, the present limit for this particular SRAM. Initial electrical analysis indicated that many of the die sites exhibited unstable I{sub DDQ} that fluctuated rapidly. We refer to this condition as ''jitter.'' The I{sub DDQ} jitter appeared to be independent of temperature and predominantly associated with the larger 256K SRAMs and not as prevalent in the 16K SRAMs (on the same reticle set). The root cause of failure was found to be two major processing problems: salicide bridging and stress-induced dislocations in the silicon islands.

Physical Description

8 p.

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OSTI as DE00009690

Medium: P; Size: 8 pages

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  • International Symposium for Testing and Failure Analysis, Santa Clara, CA (US), 11/14/1999--11/18/1999

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  • Report No.: SAND99-2014C
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 9690
  • Archival Resource Key: ark:/67531/metadc792343

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  • August 2, 1999

Added to The UNT Digital Library

  • Dec. 19, 2015, 7:14 p.m.

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  • April 11, 2017, 6:47 p.m.

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Draper, Bruce L.; Headley, Thomas J.; Hembree, Charles E.; Henderson, Christopher L. & Soden, Jerry M. Identification of Yield-Limiting Defects in a 0.5 Micron, Shallow Trench Isolation Technology, article, August 2, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc792343/: accessed December 15, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.