On the Red-Blue Set Cover Problem

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Both the increased complexity of integrated circuits, resulting in six or more levels of integration, and the increasing use of flip-chip packaging have driven the development of integrated circuit (IC) failure analysis tools that can be applied to the backside of the chip. Among these new approaches are focused ion beam (FIB) tools and processes for performing chip edits/repairs from the die backside. This paper describes the use of backside FIB for a failure analysis application rather than for chip repair. Specifically, we used FIB technology to prepare an IC for inspection of voided metal interconnects (''lines'') and vias. Conventional ... continued below

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12 p.

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Carr, Robert D.; Doddi, Srinivas; Konjevod, Goran & Marathe, Madhav July 28, 1999.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 16 times . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Both the increased complexity of integrated circuits, resulting in six or more levels of integration, and the increasing use of flip-chip packaging have driven the development of integrated circuit (IC) failure analysis tools that can be applied to the backside of the chip. Among these new approaches are focused ion beam (FIB) tools and processes for performing chip edits/repairs from the die backside. This paper describes the use of backside FIB for a failure analysis application rather than for chip repair. Specifically, we used FIB technology to prepare an IC for inspection of voided metal interconnects (''lines'') and vias. Conventional FIB milling was combined with a super-enhanced gas assisted milling process that uses XeF{sub 2} for rapid removal of large volumes of bulk silicon. This combined approach allowed removal of the TiW underlayer from a large number of Ml lines simultaneously, enabling rapid localization and plan view imaging of voids in lines and vias with backscattered electron (BSE) imaging in a scanning electron microscope (SEM). Sequential cross sections of individual voided vias enabled us to develop a 3-d reconstruction of these voids. This information clarified how the voids were formed, helping us identify the IC process steps that needed to be changed.

Physical Description

12 p.

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OSTI as DE00009675

Medium: P; Size: 12 pages

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  • Symposium on Discrete Algorithms, San Francisco, CA (US), 01/09/2000--01/11/2000

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  • Report No.: SAND99-1973C
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 9675
  • Archival Resource Key: ark:/67531/metadc791965

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • July 28, 1999

Added to The UNT Digital Library

  • Dec. 19, 2015, 7:14 p.m.

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  • April 6, 2017, 8:06 p.m.

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Carr, Robert D.; Doddi, Srinivas; Konjevod, Goran & Marathe, Madhav. On the Red-Blue Set Cover Problem, article, July 28, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc791965/: accessed November 19, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.