Magnetoresistance of One-Dimensional Subbands in Tunnel-Coupled Double Quantum Wires

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The authors study the low-temperature in-plane magnetoresistance of tunnel-coupled quasi-one-dimensional quantum wires. The wires are defined by two pairs of mutually aligned split gates on opposite sides of a {le} 1 micron thick AlGaAs/GaAs double quantum well heterostructure, allowing independent control of the width of each quantum well. In the ballistic regime, when both wires are defined and the field is perpendicular to the current, a large resistance peak at {approximately}6 Tesla is observed with a strong gate voltage dependence. The data is consistent with a counting model whereby the number of subbands crossing the Fermi level changes with field ... continued below

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21 p.

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Moon, J.S.; Blount, M.A.; Simmons, J.A.; Wendt, J.R.; Lyo, S.K. & Reno, J.L. August 4, 1999.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 13 times . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The authors study the low-temperature in-plane magnetoresistance of tunnel-coupled quasi-one-dimensional quantum wires. The wires are defined by two pairs of mutually aligned split gates on opposite sides of a {le} 1 micron thick AlGaAs/GaAs double quantum well heterostructure, allowing independent control of the width of each quantum well. In the ballistic regime, when both wires are defined and the field is perpendicular to the current, a large resistance peak at {approximately}6 Tesla is observed with a strong gate voltage dependence. The data is consistent with a counting model whereby the number of subbands crossing the Fermi level changes with field due to the formation of an anticrossing in each pair of 1D subbands.

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21 p.

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OSTI as DE00009499

Medium: P; Size: 21 pages

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  • Journal Name: Physical Review B; Other Information: Submitted to Physical Review B

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  • Report No.: SAND99-2028J
  • Grant Number: AC04-94AL85000
  • DOI: 10.1103/PhysRevB.60.11530 | External Link
  • Office of Scientific & Technical Information Report Number: 9499
  • Archival Resource Key: ark:/67531/metadc791913

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  • August 4, 1999

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  • Dec. 19, 2015, 7:14 p.m.

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  • April 7, 2017, 7:25 p.m.

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Moon, J.S.; Blount, M.A.; Simmons, J.A.; Wendt, J.R.; Lyo, S.K. & Reno, J.L. Magnetoresistance of One-Dimensional Subbands in Tunnel-Coupled Double Quantum Wires, article, August 4, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc791913/: accessed June 18, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.