RF and mm-Wave Photonics at Sandia National Laboratories

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Description

RF and mm-wave photonic devices and circuits have been developed at Sandia National Laboratories for applications ranging from RF optical data links to optical generation of mm-wave frequencies. This talk will explore recent high-speed photonics technology developments at Sandia including: (1) A monolithic optical integrated circuit for all-optical generation of mm-waves. Using integrated mode-locked diode lasers, amplifiers, and detectors, frequencies between 30 GHz and 90 GHz are generated by a single monolithic (Al,Ga)As optical circuit less than 2mm in its largest dimension. (2) Development of polarization-maintaining, low-insertion-loss, low v-pi, Mach-Zehnder interferometer (MZI) modulators with DC-to-potentially-K-band modulation bandwidth. New low-loss polarization-maintaining ... continued below

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7 p.

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Vawter, G.A. & Sullivan, C. July 8, 1999.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

RF and mm-wave photonic devices and circuits have been developed at Sandia National Laboratories for applications ranging from RF optical data links to optical generation of mm-wave frequencies. This talk will explore recent high-speed photonics technology developments at Sandia including: (1) A monolithic optical integrated circuit for all-optical generation of mm-waves. Using integrated mode-locked diode lasers, amplifiers, and detectors, frequencies between 30 GHz and 90 GHz are generated by a single monolithic (Al,Ga)As optical circuit less than 2mm in its largest dimension. (2) Development of polarization-maintaining, low-insertion-loss, low v-pi, Mach-Zehnder interferometer (MZI) modulators with DC-to-potentially-K-band modulation bandwidth. New low-loss polarization-maintaining waveguide designs using binary alloys have been shown to reduce polarization crosstalk in undoped (Al,Ga)As waveguides, yielding high extinction ratio (>40dB) and low on-chip loss (<6dB) in Mach-Zehnder interferometers. RF drive voltage is reduced through use of 45rnrn-active length devices with modulator sensitivity, v-pi, less than 3V.

Physical Description

7 p.

Notes

OSTI as DE00008800

Medium: P; Size: 7 pages

Source

  • Journal Name: Proceedings of SPIE, vol 3795 Terahertz and Gigahertz Photonics; Other Information: Submitted to Proceedings of SPIE, vol 3795 Terahertz and Gigahertz Photonics

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  • Report No.: SAND99-1746J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 8800
  • Archival Resource Key: ark:/67531/metadc791735

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Office of Scientific & Technical Information Technical Reports

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  • July 8, 1999

Added to The UNT Digital Library

  • Dec. 19, 2015, 7:14 p.m.

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  • April 11, 2017, 3:26 p.m.

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Vawter, G.A. & Sullivan, C. RF and mm-Wave Photonics at Sandia National Laboratories, article, July 8, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc791735/: accessed December 16, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.