The influence of grain structure on the reliability of narrow Al- based interconnects

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The work reported here concerns the effect of grain structure on electromigration failure in pure A1 and A1-2wt.% Cu-1 wt.% Si lines. The grain structure of fine lines were controlled by annealing after pattering to promote the formation of ``bamboo`` structures. Significant improvements in the median time to failure (MTF) and the deviation of the time to failure (DTF) were observed with the development of near-bamboo structures with polygranular-segment lengths shorter than {approximately} 5 {mu}m. The most common failure sites are voids or slits across bamboo grains at the upstream ends of polygranular segments. The time-to-failure decreases with the polygranular ... continued below

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8 p.

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Kang, S.H.; Kim, C.l Morris, J.W. Jr. & Genin, F.Y. May 1, 1995.

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Description

The work reported here concerns the effect of grain structure on electromigration failure in pure A1 and A1-2wt.% Cu-1 wt.% Si lines. The grain structure of fine lines were controlled by annealing after pattering to promote the formation of ``bamboo`` structures. Significant improvements in the median time to failure (MTF) and the deviation of the time to failure (DTF) were observed with the development of near-bamboo structures with polygranular-segment lengths shorter than {approximately} 5 {mu}m. The most common failure sites are voids or slits across bamboo grains at the upstream ends of polygranular segments. The time-to-failure decreases with the polygranular segment length, and can be significantly enhanced by controlling the grain structure.

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8 p.

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OSTI as DE95015883

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  • Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 17-21 Apr 1995

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  • Other: DE95015883
  • Report No.: UCRL-JC--120336
  • Report No.: CONF-950412--32
  • Grant Number: W-7405-ENG-48;AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 95316
  • Archival Resource Key: ark:/67531/metadc791713

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Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • May 1, 1995

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  • Dec. 19, 2015, 7:14 p.m.

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  • Feb. 16, 2016, 8:07 p.m.

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Kang, S.H.; Kim, C.l Morris, J.W. Jr. & Genin, F.Y. The influence of grain structure on the reliability of narrow Al- based interconnects, article, May 1, 1995; California. (digital.library.unt.edu/ark:/67531/metadc791713/: accessed April 20, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.