[Structure and electronic properties of defects at nonlattice matched III-V semiconductor interfaces]. Progress report, 1989--90

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Research focused on control of misfit dislocations in strained epitaxial layers of GaAs through prepatterning of the substrate. Patterning and etching trenches into GaAs substrates before epitaxial growth results in nonplanar wafer surface, which makes device fabrication more difficult. Selective ion damaging the substrate prior to growth was investigated. The question of whether the overlayer must or must not be discontinuous was addressed. The third research direction was to extend results from molecular beam epitaxially grown material to organometallic chemical vapor deposition. Effort was increased to study the patterning processes and the damage it introduces into the substrate. The research ... continued below

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8 p.

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Ast, D.G. December 31, 1990.

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Description

Research focused on control of misfit dislocations in strained epitaxial layers of GaAs through prepatterning of the substrate. Patterning and etching trenches into GaAs substrates before epitaxial growth results in nonplanar wafer surface, which makes device fabrication more difficult. Selective ion damaging the substrate prior to growth was investigated. The question of whether the overlayer must or must not be discontinuous was addressed. The third research direction was to extend results from molecular beam epitaxially grown material to organometallic chemical vapor deposition. Effort was increased to study the patterning processes and the damage it introduces into the substrate. The research program was initiated after the discovery that 500-eV dry etching in GaAs damages the substrate much deeper than the ion range.

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8 p.

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OSTI as DE95013303

Medium: P; Size: 8 p.

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  • Other Information: PBD: [1990]

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  • Other: DE95013303
  • Report No.: DOE/ER/45278--4
  • Grant Number: FG02-86ER45278
  • DOI: 10.2172/90071 | External Link
  • Office of Scientific & Technical Information Report Number: 90071
  • Archival Resource Key: ark:/67531/metadc791559

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  • December 31, 1990

Added to The UNT Digital Library

  • Dec. 19, 2015, 7:14 p.m.

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  • April 13, 2017, 2:05 p.m.

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Ast, D.G. [Structure and electronic properties of defects at nonlattice matched III-V semiconductor interfaces]. Progress report, 1989--90, report, December 31, 1990; United States. (digital.library.unt.edu/ark:/67531/metadc791559/: accessed October 20, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.