Electronic and Optical Properties of Energetic Particle-IrradiatedIn-rich InGaN

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We have carried out a systematic study of the effects of irradiation on the electronic and optical properties of InGaN alloys over the entire composition range. High energy electrons, protons, and {sup 4}He{sup +} were used to produce displacement damage doses (D{sub d}) spanning over five orders of magnitude. The free electron concentrations in InN and In-rich InGaN increase with D{sub d} and finally saturate after a sufficiently high D{sub d}. The saturation of carrier density is attributed to the formation of native donors and the Fermi level pinning at the Fermi Stabilization Energy (E{sub FS}), as predicted by the ... continued below

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Li, S. X.; Yu, K. M.; Jones, R. E.; Wu, J.; Walukiewicz, W.; AgerIII, J. W. et al. April 13, 2005.

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We have carried out a systematic study of the effects of irradiation on the electronic and optical properties of InGaN alloys over the entire composition range. High energy electrons, protons, and {sup 4}He{sup +} were used to produce displacement damage doses (D{sub d}) spanning over five orders of magnitude. The free electron concentrations in InN and In-rich InGaN increase with D{sub d} and finally saturate after a sufficiently high D{sub d}. The saturation of carrier density is attributed to the formation of native donors and the Fermi level pinning at the Fermi Stabilization Energy (E{sub FS}), as predicted by the amphoteric native defect model. Electrochemical capacitance-voltage (ECV) measurements reveal a surface electron accumulation whose concentration is determined by pinning at E{sub FS}.

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  • 2005 Materials Research Society Spring Meeting,San Francisco, CA, March 28-April 15, 2005

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  • Report No.: LBNL--57464
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 861520
  • Grant Number: Contract N000149910936
  • Archival Resource Key: ark:/67531/metadc791520

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  • April 13, 2005

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  • Dec. 19, 2015, 7:14 p.m.

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  • April 9, 2018, 7:23 p.m.

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Li, S. X.; Yu, K. M.; Jones, R. E.; Wu, J.; Walukiewicz, W.; AgerIII, J. W. et al. Electronic and Optical Properties of Energetic Particle-IrradiatedIn-rich InGaN, article, April 13, 2005; Warrendale, Pennsylvania. (digital.library.unt.edu/ark:/67531/metadc791520/: accessed July 21, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.