HRTEM image simulations for the study of ultra-thin gate oxides

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We have performed high resolution transmission electron microscope (HRTEM) image simulations to qualitatively assess the visibility of various structural defects in ultra-thin gate oxides of MOSFET devices, and to quantitatively examine the accuracy of HRTEM in performing gate oxide metrology. Structural models contained crystalline defects embedded in an amorphous 16 {angstrom}-thick gate oxide. Simulated images were calculated for structures viewed in cross-section. Defect visibility was assessed as a function of specimen thickness and defect morphology, composition, size and orientation. Defect morphologies included asperities lying on the substrate surface, as well as ''bridging'' defects connecting the substrate to the gate electrode. ... continued below

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29 pages

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Taylor, Seth T.; Mardinly, John & O'Keefe, Michael A. July 17, 2001.

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Description

We have performed high resolution transmission electron microscope (HRTEM) image simulations to qualitatively assess the visibility of various structural defects in ultra-thin gate oxides of MOSFET devices, and to quantitatively examine the accuracy of HRTEM in performing gate oxide metrology. Structural models contained crystalline defects embedded in an amorphous 16 {angstrom}-thick gate oxide. Simulated images were calculated for structures viewed in cross-section. Defect visibility was assessed as a function of specimen thickness and defect morphology, composition, size and orientation. Defect morphologies included asperities lying on the substrate surface, as well as ''bridging'' defects connecting the substrate to the gate electrode. Measurements of gate oxide thickness extracted from simulated images were compared to actual dimensions in the model structure to assess TEM accuracy for metrology. The effects of specimen tilt, specimen thickness, objective lens defocus and coefficient of spherical aberration (C{sub s}) on measurement accuracy were explored for nominal 10{angstrom} gate oxide thickness. Results from this work suggest that accurate metrology of ultra-thin gate oxides (i.e. limited to several per cent error) is feasible on a consistent basis only by using a C{sub s}-corrected microscope. However, fundamental limitations remain for characterizing defects in gate oxides using HRTEM, even with the new generation of C{sub s}-corrected microscopes.

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29 pages

Notes

OSTI as DE00835339

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  • Journal Name: Microscopy and Microanalysis; Journal Volume: 8; Journal Issue: 5; Other Information: Submitted to Microscopy and Microanalysis, Volume 8, No.5; Journal Publication Date: 10/2002

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  • Report No.: LBNL--48170
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 835339
  • Archival Resource Key: ark:/67531/metadc789049

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • July 17, 2001

Added to The UNT Digital Library

  • Dec. 3, 2015, 9:30 a.m.

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  • April 4, 2016, 6:20 p.m.

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Taylor, Seth T.; Mardinly, John & O'Keefe, Michael A. HRTEM image simulations for the study of ultra-thin gate oxides, article, July 17, 2001; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc789049/: accessed October 18, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.