NANOSTRUCTURED HIGH PERFORMANCE ULTRAVIOLET AND BLUE LIGHT EMITTING DIODES FOR SOLID STATE LIGHTING Page: 4 of 28
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The stated aim of this research is to synergize advanced material science approaches with
fundamental optical physics concepts pertaining to light-matter interaction, with the goal
of solving seminal problems for the development of very high performance light emitting
diodes (LEDs) in the blue and near ultraviolet for Solid State Lighting applications,
covering the spectral regime of approximately 370-480 nm. Our mission is to implement
novel, highly adaptable device concepts that enable their flexible utilization and matching
to the broad spectrum of approaches and requirements that pertain to contemporary solid
state lighting approaches. The light emitters will be based on nanostructured gallium
nitride and related semiconductor heterostructures, which are enclosed by mesoscopic
optical confinement and directional housings. The proposed research aims to reach the
goal of a highly wall-plug efficient, high optical power device by concentrating on two
specific, closely coupled performance dictating elements within the LED.
The research program has been organized in the following way: First, we are synthesizing
nanostructured active media to enhance the internal radiative efficiency, by utilizing
special concepts in epitaxial growth for synthesizing quantum dots and quantum wires.
During the first 12 month contract period we have made substantially advances in the
synthesis of zero- and one-dimensional GaN nanostructures by crystal growth technique
that exploits a vapor-liquid-solid nucleation pathway. Second, the research has also
focused focus on the design and fabrication of advanced photonic confinement structures,
which encase the nanostructured active medium for enhancing the spontaneous emission
by strengthening light-matter interaction at a fundamental level and for efficiently
extracting and distributing the photons for delivery into specific geometrical radiation
patterns by design. During the first 12 month period we have established the fabrication
means for key building blocks for making GaN-based microcavity devices. In addition,
novel light emitting structures, with active element feature size on the subwavelength
scale have been fabricated and tested. These include a demonstration of eight-fold
enhancement of the external emission efficiency in new InGaN QW photonic crystal
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Nurmikko, Arto V. & Han, Jung. NANOSTRUCTURED HIGH PERFORMANCE ULTRAVIOLET AND BLUE LIGHT EMITTING DIODES FOR SOLID STATE LIGHTING, report, October 1, 2004; United States. (digital.library.unt.edu/ark:/67531/metadc788706/m1/4/: accessed December 10, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.