Growth modes of InN(000-1) on GaN buffer layers on sapphire

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In this work, using atomic force microscopy and scanning tunneling microscopy, we study the surface morphologies of epitaxial InN films grown by plasma-assisted molecular beam epitaxy with intervening GaN buffer layers on sapphire substrates. On smooth GaN buffer layers, nucleation and evolution of three-dimensional InN islands at various coverages and growth temperatures are investigated. The shapes of the InN islands are observed to be predominantly mesa-like with large flat (000-1) tops, which suggests a possible role of indium as a surfactant. Rough GaN buffer layers composed of dense small GaN islands are found to significantly improve uniform InN wetting of ... continued below

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24 pages

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Liu, Bing; Kitajima, Takeshi; Chen, Dongxue & Leone, Stephen R. January 24, 2005.

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In this work, using atomic force microscopy and scanning tunneling microscopy, we study the surface morphologies of epitaxial InN films grown by plasma-assisted molecular beam epitaxy with intervening GaN buffer layers on sapphire substrates. On smooth GaN buffer layers, nucleation and evolution of three-dimensional InN islands at various coverages and growth temperatures are investigated. The shapes of the InN islands are observed to be predominantly mesa-like with large flat (000-1) tops, which suggests a possible role of indium as a surfactant. Rough GaN buffer layers composed of dense small GaN islands are found to significantly improve uniform InN wetting of the substrates, on which atomically smooth InN films are obtained that show the characteristics of step-flow growth. Scanning tunneling microscopy imaging reveals the defect-mediated surface morphology of smooth InN films, including surface terminations of screw dislocations and a high density of shallow surface pits with depths less than 0.3 nm. The mechanisms of the three-dimensional island size and shape evolution and formation of defects on smooth surfaces are considered.

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24 pages

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OSTI as DE00841069

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  • Journal Name: Journal of Vacuum Science and Technology A; Journal Volume: 23; Journal Issue: 2; Other Information: Submitted to the Journal of Vacuum Science and Technology A: Volume 23, No.2; Journal Publication Date: Mar./Apr. 2005

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  • Report No.: LBNL--56912
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 841069
  • Archival Resource Key: ark:/67531/metadc788418

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  • January 24, 2005

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  • Dec. 3, 2015, 9:30 a.m.

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  • April 4, 2016, 3:19 p.m.

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Liu, Bing; Kitajima, Takeshi; Chen, Dongxue & Leone, Stephen R. Growth modes of InN(000-1) on GaN buffer layers on sapphire, article, January 24, 2005; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc788418/: accessed August 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.