Influence of the Sb dopant distribution on far infrared photoconductivity in Ge:Sb blocked impurity band detectors

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Extended long wavelength response to {approx}200 {micro}m (50 cm{sup -1}) has been observed in Ge:Sb Blocked Impurity Band (BIB) detectors with N{sub D} {approx} 1 x 10{sup 16} cm{sup -3}. The cut-off wavelength increases from 150 {micro}m (65 cm{sup -1}) to 200 {micro}m (50 cm{sup -1}) with increasing bias. The responsivity at long wavelengths was lower than expected. This can be explained by considering the observed Sb diffusion profile in a transition region between the blocking layer and active layer. BIB modeling is presented which indicates that this Sb concentration profile increases the electric field in the transition region and ... continued below

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17 pages

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Bandaru, Jordana; Beeman, Jeffrey W.; Haller, Eugene E.; Samperi, Stacy & Haegel, Nancy M. February 6, 2002.

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Extended long wavelength response to {approx}200 {micro}m (50 cm{sup -1}) has been observed in Ge:Sb Blocked Impurity Band (BIB) detectors with N{sub D} {approx} 1 x 10{sup 16} cm{sup -3}. The cut-off wavelength increases from 150 {micro}m (65 cm{sup -1}) to 200 {micro}m (50 cm{sup -1}) with increasing bias. The responsivity at long wavelengths was lower than expected. This can be explained by considering the observed Sb diffusion profile in a transition region between the blocking layer and active layer. BIB modeling is presented which indicates that this Sb concentration profile increases the electric field in the transition region and reduces the field in the blocking layer. The depletion region consists partially of the transition region between the active and blocking layer, which could contribute to the reduced long wavelength response. The field spike at the interface is the likely cause of breakdown at a lower bias than expected.

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17 pages

Notes

OSTI as DE00837727

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  • Journal Name: Infrared Physics and Technology; Journal Volume: 43; Journal Issue: 6; Other Information: Submitted to Infrared Physics and Technology: Volume 43, No.6; Journal Publication Date: 12/2002

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  • Report No.: LBNL--49589
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 837727
  • Archival Resource Key: ark:/67531/metadc788341

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  • February 6, 2002

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  • Dec. 3, 2015, 9:30 a.m.

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  • Sept. 21, 2017, 6:56 p.m.

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Bandaru, Jordana; Beeman, Jeffrey W.; Haller, Eugene E.; Samperi, Stacy & Haegel, Nancy M. Influence of the Sb dopant distribution on far infrared photoconductivity in Ge:Sb blocked impurity band detectors, article, February 6, 2002; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc788341/: accessed June 20, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.