0.52eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology

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Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice-matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm{sup 2} multi-chip diode modules with front-surface spectral filters were tested in a vacuum cavity and attained measured efficiency and power density of 19% and 0.58 W/cm{sup 2} respectively at operating at temperatures of T{sub radiator} = 950 C and T{sub diode} = 27 C. Device modeling and minority carrier lifetime measurements of double heterostructure lifetime specimens indicate that diode conversion efficiency is limited predominantly by interface recombination and photon energy loss to the GaSb substrate and back ohmic ... continued below

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169 Kilobytes pages

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Dashiell, M. W.; Beausang, J. F.; Nichols, G.; Depoy, D. M.; Danielson, L. R.; Ehsani, H. et al. June 9, 2004.

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Description

Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice-matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm{sup 2} multi-chip diode modules with front-surface spectral filters were tested in a vacuum cavity and attained measured efficiency and power density of 19% and 0.58 W/cm{sup 2} respectively at operating at temperatures of T{sub radiator} = 950 C and T{sub diode} = 27 C. Device modeling and minority carrier lifetime measurements of double heterostructure lifetime specimens indicate that diode conversion efficiency is limited predominantly by interface recombination and photon energy loss to the GaSb substrate and back ohmic contact. Recent improvements to the diode include lattice-matched p-type AlGaAsSb passivating layers with interface recombination velocities less than 100 cm/s and new processing techniques enabling thinned substrates and back surface reflectors. Modeling predictions of these improvements to the diode architecture indicate that conversion efficiencies from 27-30% and {approx}0.85 W/cm{sup 2} could be attained under the above operating temperatures.

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169 Kilobytes pages

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INIS; OSTI as DE00837459

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  • Other Information: PBD: 9 Jun 2004

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  • Report No.: LM-04K047
  • Grant Number: AC 12-00-SN39357
  • DOI: 10.2172/837459 | External Link
  • Office of Scientific & Technical Information Report Number: 837459
  • Archival Resource Key: ark:/67531/metadc788112

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  • June 9, 2004

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  • Dec. 3, 2015, 9:30 a.m.

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  • April 28, 2016, 8:43 p.m.

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Dashiell, M. W.; Beausang, J. F.; Nichols, G.; Depoy, D. M.; Danielson, L. R.; Ehsani, H. et al. 0.52eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology, report, June 9, 2004; Schenectady, New York. (digital.library.unt.edu/ark:/67531/metadc788112/: accessed August 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.