A Single Step Lapping and Polishing Process for Achieving Surfaces of Compound Semiconductors with Atomic Flatness using a Sub-micron Agglomerate-free Alumina Slurry

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A novel approach for a single step lapping and final polishing of III-V and II-VI compounds using agglomerate-free alumina slurries has been developed. The agglomerate-free nature of the sub-micron slurry leads to removal rates comparable to conventional slurries (with larger particles of tens of microns) used for semiconductor lapping. Surfaces with minimal surface damage and extremely low surface roughness have been obtained using the sub-micron slurries and a soft pad. Strategies for post polishing surface cleaning have been discussed. The new methodology has been experimented on GaSb, InAs, GaAs, InP, InSb, CdTe, GaInSb, GaInAs, AlGaAsSb, GaInAsSb and HgCdTe. Selected results ... continued below

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3068 Kilobytes pages

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Dutta, P.S.; Rajagopalan, G.; Gutmann, J.J.; Keller, D. & Sweet, L. August 29, 2002.

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  • Lockheed Martin
    Publisher Info: Lockheed Martin Corporation, Schenectady, NY 12301 (United States)
    Place of Publication: Schenectady, New York

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Description

A novel approach for a single step lapping and final polishing of III-V and II-VI compounds using agglomerate-free alumina slurries has been developed. The agglomerate-free nature of the sub-micron slurry leads to removal rates comparable to conventional slurries (with larger particles of tens of microns) used for semiconductor lapping. Surfaces with minimal surface damage and extremely low surface roughness have been obtained using the sub-micron slurries and a soft pad. Strategies for post polishing surface cleaning have been discussed. The new methodology has been experimented on GaSb, InAs, GaAs, InP, InSb, CdTe, GaInSb, GaInAs, AlGaAsSb, GaInAsSb and HgCdTe. Selected results of surface analyses of GaSb and GaInSb using atomic force microscopy will be presented.

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3068 Kilobytes pages

Notes

OSTI as DE00821860

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  • Other Information: PBD: 29 Aug 2002

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  • Report No.: LM-02K071
  • Grant Number: AC12-00SN39357
  • DOI: 10.2172/821860 | External Link
  • Office of Scientific & Technical Information Report Number: 821860
  • Archival Resource Key: ark:/67531/metadc787906

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  • August 29, 2002

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  • Dec. 3, 2015, 9:30 a.m.

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  • April 28, 2016, 9:43 p.m.

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Dutta, P.S.; Rajagopalan, G.; Gutmann, J.J.; Keller, D. & Sweet, L. A Single Step Lapping and Polishing Process for Achieving Surfaces of Compound Semiconductors with Atomic Flatness using a Sub-micron Agglomerate-free Alumina Slurry, report, August 29, 2002; Schenectady, New York. (digital.library.unt.edu/ark:/67531/metadc787906/: accessed December 11, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.