GaInAsSb/A1GaAsSb/Sb Thermophotovoltaic Devices With an Internal Back-Surface Reflector Formed by Wafer Bonding

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A novel implementation for GAInAsSb/AlGaAsSb/GaSb TPV cells with an internal back-surface reflector (BSR) formed by wafer bonding to GaAs is demonstrated. The SiO{sub x}/Ti/Au internal BSR enhances optical absorption within the device, while the dielectric layer provides electrical isolation. This configuration has the potential to improve TPV device performance; is compatible with monolithic series-interconnection of TPV cells for building voltage; and can mitigate the requirements of filters used for front-surface spectral control. At a short-circuit density of 0.4 A/cm{sup 2}, the open-circuit voltage of a single TPV cell is 0.2 V, compared to 0.37 and 1.8 V for 2- and ... continued below

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3250 Kilobytes pages

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Wang, C.A.; Huang, R.K.; Shiau, D.A.; Connors, M.K.; Murphy, P.G.; O'brien, P.W. et al. December 18, 2002.

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  • Lockheed Martin
    Publisher Info: Lockheed Martin Corporation, Schenectady, NY 12301 (United States)
    Place of Publication: Schenectady, New York

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Description

A novel implementation for GAInAsSb/AlGaAsSb/GaSb TPV cells with an internal back-surface reflector (BSR) formed by wafer bonding to GaAs is demonstrated. The SiO{sub x}/Ti/Au internal BSR enhances optical absorption within the device, while the dielectric layer provides electrical isolation. This configuration has the potential to improve TPV device performance; is compatible with monolithic series-interconnection of TPV cells for building voltage; and can mitigate the requirements of filters used for front-surface spectral control. At a short-circuit density of 0.4 A/cm{sup 2}, the open-circuit voltage of a single TPV cell is 0.2 V, compared to 0.37 and 1.8 V for 2- and 10-junction series-interconnected TPV cells, respectively.

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3250 Kilobytes pages

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OSTI as DE00821864

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  • Other Information: PBD: 18 Dec 2002

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  • Report No.: LM-02K141
  • Grant Number: AC12-00SN39357
  • DOI: 10.2172/821864 | External Link
  • Office of Scientific & Technical Information Report Number: 821864
  • Archival Resource Key: ark:/67531/metadc787790

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  • December 18, 2002

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  • Dec. 3, 2015, 9:30 a.m.

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  • April 28, 2016, 8:44 p.m.

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Wang, C.A.; Huang, R.K.; Shiau, D.A.; Connors, M.K.; Murphy, P.G.; O'brien, P.W. et al. GaInAsSb/A1GaAsSb/Sb Thermophotovoltaic Devices With an Internal Back-Surface Reflector Formed by Wafer Bonding, report, December 18, 2002; Schenectady, New York. (digital.library.unt.edu/ark:/67531/metadc787790/: accessed August 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.