Two-dimensional sample temperature modeling in separation by plasma implantation of oxygen (SPIMOX) process

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Plasma immersion ion implantation (PIII) offers high throughput and efficiency in the synthesis of silicon-on-insulator (SOI) materials. In the separation by plasma implantation of oxygen (SPIMOX) process, the spatial and time variation of the sample temperature must be known and well controlled to ensure uniform buried oxide and silicon overlying layer thicknesses over the entire silicon wafer. In this paper, we describe a two-dimensional model and derive the temperature distribution on the silicon wafer with respect to time and other process parameters. Our results show laterally non-uniform heating by the incoming ions and the local temperature is influenced more by ... continued below

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20 pages

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Tian, X.; Chu, P.K. & Anders, A. July 25, 2001.

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Plasma immersion ion implantation (PIII) offers high throughput and efficiency in the synthesis of silicon-on-insulator (SOI) materials. In the separation by plasma implantation of oxygen (SPIMOX) process, the spatial and time variation of the sample temperature must be known and well controlled to ensure uniform buried oxide and silicon overlying layer thicknesses over the entire silicon wafer. In this paper, we describe a two-dimensional model and derive the temperature distribution on the silicon wafer with respect to time and other process parameters. Our results show laterally non-uniform heating by the incoming ions and the local temperature is influenced more by the sample voltage and thermal irradiation coefficient of the target than the pulse duration and plasma density. The model provides a simple and quick means to determine whether external heating will be needed to maintain the sample temperature at 600 C during the SPIMOX process.

Physical Description

20 pages

Notes

OSTI as DE00836652

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  • Journal Name: IEEE Transactions on Plasma Science; Journal Volume: 30; Journal Issue: 1 Pt 3; Other Information: Submitted to IEEE Transactions on Plasma Science: Volume 30, No.1, Part 3; Journal Publication Date: 02/2002

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  • Report No.: LBNL--48996
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 836652
  • Archival Resource Key: ark:/67531/metadc787666

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  • July 25, 2001

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  • Dec. 3, 2015, 9:30 a.m.

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  • April 4, 2016, 2:40 p.m.

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Tian, X.; Chu, P.K. & Anders, A. Two-dimensional sample temperature modeling in separation by plasma implantation of oxygen (SPIMOX) process, article, July 25, 2001; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc787666/: accessed August 19, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.