Production of High Value Fluorine Gases for the Semiconductor Industry

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The chemistry to manufacture high purity GeF{sub 4} and WF{sub 6} for use in the semiconductor industry using Starmet's new fluorine extraction technology has been developed. Production of GeF{sub 4} was established using a tube-style reactor system where conversion yields as high as 98.1% were attained for the reaction between and GeO{sub 2}. Collection of the fluoride gas improved to 97.7% when the reactor sweep gas contained a small fraction of dry air (10-12 vol%) along with helium. The lab-synthesized product was shown to contain the least amount of infrared active and elemental impurities when compared with a reference material ... continued below

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Bulko, J. B. October 23, 2003.

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Description

The chemistry to manufacture high purity GeF{sub 4} and WF{sub 6} for use in the semiconductor industry using Starmet's new fluorine extraction technology has been developed. Production of GeF{sub 4} was established using a tube-style reactor system where conversion yields as high as 98.1% were attained for the reaction between and GeO{sub 2}. Collection of the fluoride gas improved to 97.7% when the reactor sweep gas contained a small fraction of dry air (10-12 vol%) along with helium. The lab-synthesized product was shown to contain the least amount of infrared active and elemental impurities when compared with a reference material certified at 99.99% purity. Analysis of the ''as-produced'' gas using ICP-MS showed that uranium could not be detected at a detection limit of 0.019ppm-wt. A process to make WF{sub 6} from WO{sub 2}, and UF{sub 4}, produced a WOF{sub 4} intermediate, which proved difficult to convert to tungsten hexafluoride using titanium fluoride as a fluorinating agent.

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OSTI as DE00824744

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  • Other Information: PBD: 23 Oct 2003

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  • Report No.: DOE/ER/80894
  • Grant Number: FG02-99ER82894
  • DOI: 10.2172/824744 | External Link
  • Office of Scientific & Technical Information Report Number: 824744
  • Archival Resource Key: ark:/67531/metadc787634

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  • October 23, 2003

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  • Dec. 3, 2015, 9:30 a.m.

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  • Aug. 4, 2016, 7:52 p.m.

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Bulko, J. B. Production of High Value Fluorine Gases for the Semiconductor Industry, report, October 23, 2003; United States. (digital.library.unt.edu/ark:/67531/metadc787634/: accessed August 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.