DEVELOPMENT OF SiC DEVICES FOR DIAGNOSTICS AND CONTROL OF COMBUSTION PRODUCTS IN ENERGY PLANT ENVIRONMENTS Page: 9 of 46
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3. EXPERIMENTAL
3.1 Samples
For our high temperature sensors, we prepare silicon carbide based metal-
insulator-semiconductor devices (MISiCs) as capacitors. The cross section of the
finished capacitors is shown in Fig. 3.1.1. The SiC wafers are obtained commercially
from Cree, Inc [Cree]. The thermal oxide is prepared by Cree, Inc. or by the group of
J. Cooper at Purdue University. The oxide is grown at Cree in dry oxygen at 1470 K
[Lipkin 1996], and at Purdue in wet oxygen at 1420 K, followed at both locations by a
wet anneal at 1220 K. The samples are then sawed into 1 cm x 1 cm pieces. While being
sawed, the samples are protected with photoresist that is afterwards removed with
Nanostrip . The sample are then covered with photoresist only on the front side, the
back oxide is etched off in buffered hydrogen fluoride solution, and the photoresist is
removed with Nanostrip . All chemicals used are CMOS grade.Pt
Ti
SiO2100 nm
2 nm
46 nm
10pimFig 3.1.1 Schematic cross section of the MISiC capacitor. Pt is deposited on a
thermally oxidized SiC substrate with dot diameters from 200 to 1000 m. Some
samples had an intermediate layer of Ti. The Pt thickness was 100 nm for the sensor
and capacitance measurement; for photoemission measurements the Pt thicknesses
was 15 to 20 nm.9
SiC
-yp_, low doped epilayer _
SiC
n-type, high doped bulk
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Ghosh, Ruby N. & Tobias, Peter. DEVELOPMENT OF SiC DEVICES FOR DIAGNOSTICS AND CONTROL OF COMBUSTION PRODUCTS IN ENERGY PLANT ENVIRONMENTS, report, December 1, 2003; United States. (https://digital.library.unt.edu/ark:/67531/metadc785821/m1/9/: accessed April 25, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.