Direct evidence of the fermi-energy-dependent formation of Mn interstitials in modulation doped Ga1-yAlyAs/Ga1-xMnxAs/Ga1-yAlyAs heterostructures

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Using ion channeling techniques, we investigate the lattice locations of Mn in Ga{sub 1-x}Mn{sub x}As quantum wells between Be-doped Ga{sub 1-y}Al{sub y}As barriers. The earlier results showed that the Curie temperature T{sub C} depends on the growth sequence of the epitaxial layers. A lower T{sub C} was found in heterostructures in which the Ga{sub 1-x}Mn{sub x}As layer is grown after the modulation-doped barrier. Here we provide direct evidence that this reduction in T{sub C} is directly correlated with an increased formation of magnetically inactive Mn interstitials. The formation of interstitials is induced by a shift of the Fermi energy as ... continued below

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11 pages

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Yu, K.M.; Walukiewicz, W.; Wojtowicz, T.; Lim, W.L.; Liu, X.; Dobrowolska, M. et al. January 30, 2004.

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Using ion channeling techniques, we investigate the lattice locations of Mn in Ga{sub 1-x}Mn{sub x}As quantum wells between Be-doped Ga{sub 1-y}Al{sub y}As barriers. The earlier results showed that the Curie temperature T{sub C} depends on the growth sequence of the epitaxial layers. A lower T{sub C} was found in heterostructures in which the Ga{sub 1-x}Mn{sub x}As layer is grown after the modulation-doped barrier. Here we provide direct evidence that this reduction in T{sub C} is directly correlated with an increased formation of magnetically inactive Mn interstitials. The formation of interstitials is induced by a shift of the Fermi energy as a result of the transfer of holes from the barrier to the quantum well during the growth.

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11 pages

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OSTI as DE00840028

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  • Journal Name: Applied Physics Letters; Journal Volume: 84; Journal Issue: 21; Other Information: Submitted to Applied Physics Letters: Volume 84, No.21; Journal Publication Date: 05/24/2004

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  • Report No.: LBNL-54458
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 840028
  • Grant Number: DMR02-10519
  • Grant Number: N00014-00-1-0951
  • Archival Resource Key: ark:/67531/metadc785655

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  • January 30, 2004

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  • Dec. 3, 2015, 9:30 a.m.

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Yu, K.M.; Walukiewicz, W.; Wojtowicz, T.; Lim, W.L.; Liu, X.; Dobrowolska, M. et al. Direct evidence of the fermi-energy-dependent formation of Mn interstitials in modulation doped Ga1-yAlyAs/Ga1-xMnxAs/Ga1-yAlyAs heterostructures, article, January 30, 2004; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc785655/: accessed October 22, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.