ULTRA-HIGH TEMPERATURE SENSORS BASED ON OPTICAL PROPERTY MODULATION AND VIBRATION-TOLERANT INTERFEROMETRY Page: 4 of 42
This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided to Digital Library by the UNT Libraries Government Documents Department.
The following text was automatically extracted from the image on this page using optical character recognition software:
D: LIST OF GRAPHICAL MATERIALS
Fig. la. HTHP (High temperature (up to 1200 C) and high pressure (up to 100 atm)) cell design.
1,4: Insulator; 2: Silicon Carbide; 3: Induction Heater; 5,8: Stainless Disk; 6,7: Cooler.
Fig. lb. Cylindrical aluminum test cell design to examine the performance of the reflective
interferometer at room temperature.
Fig. 2a. A photograph of the fabricated room temperature cell for holding the SiC optical chip for
testing the reflective interferometric measurement at room temperature.
Fig. 2b. A photograph of designed and fabricated novel high temperature and high pressure cell
for high temperature and high pressure measurements.
Fig. 3 Photograph of a power supply for the induction heating coil of the HTHP cell.
Fig. 4. Basic features of a silicon carbide window implemented design. TMF - Thin metal film,
RB - Reference laser beam and SB - Signal (Probe) laser.
Fig. 5. Pictures of the fabricated tungsten-coated silicon carbide windows to be used as a high
temperature and high pressure sensor element. These photos show the front sides of the
windows with tungsten film covering one-half of each wafer.
Fig. 6. Pictures of the fabricated tungsten-coated silicon carbide windows to be used as a high
temperature and high pressure sensor element. These photos show the back sides of the windows
with tungsten film covering the entire backside of each wafer designed for reflective
Fig. 7. Vacuum chamber for diffusive thin film deposition on silicon carbide for high
temperature and high pressure sensor applications.
Fig. 8. Target holder to be used in the vacuum chamber (Fig. 7) for thin film deposition.
Fig. 9. Substrate holder to be used in the vacuum chamber (Fig. 7) for thin film deposition.
Fig.10 Fundamental Design of the Proposed Interferometer that engages the SiC Optical Chip
with two optical beams. This is an externally referenced baseline interferometer.
Fig.11 Proposed design of the internally referenced polarization multiplexed scanning
Fig.12 Laboratory system implementation of Fig. 11, including use of the fabricated SiC holder
shown in Fig.2a.
Here’s what’s next.
This report can be searched. Note: Results may vary based on the legibility of text within the document.
Tools / Downloads
Get a copy of this page or view the extracted text.
Citing and Sharing
Basic information for referencing this web page. We also provide extended guidance on usage rights, references, copying or embedding.
Reference the current page of this Report.
Riza, Nabeel A. ULTRA-HIGH TEMPERATURE SENSORS BASED ON OPTICAL PROPERTY MODULATION AND VIBRATION-TOLERANT INTERFEROMETRY, report, November 10, 2004; United States. (digital.library.unt.edu/ark:/67531/metadc785623/m1/4/: accessed June 23, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.