Plasma Damage in p-GaN

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The effect of Inductively Coupled Plasma H{sub 2} or Ar discharges on the breakdown voltage of p-GaN diodes was measured over a range of ion energies and fluxes. The main effect of plasma exposure is a decrease in net acceptor concentration to depths of 400-550{angstrom}. At high ion fluxes or energies there can be type conversion of the initially p-GaN surface. Post etch annealing at 900 C restores the initial conductivity.

Physical Description

23 p.

Creation Information

Cao, X.A.; Dang, G.T.; Hickman, R.A.; Pearton, S.J.; Ren, F.; Shul, R.J. et al. June 30, 1999.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 28 times . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The effect of Inductively Coupled Plasma H{sub 2} or Ar discharges on the breakdown voltage of p-GaN diodes was measured over a range of ion energies and fluxes. The main effect of plasma exposure is a decrease in net acceptor concentration to depths of 400-550{angstrom}. At high ion fluxes or energies there can be type conversion of the initially p-GaN surface. Post etch annealing at 900 C restores the initial conductivity.

Physical Description

23 p.

Notes

OSTI as DE00008439

Medium: P; Size: 23 pages

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  • Journal Name: Journal of Electronic Materials; Other Information: Submitted to Journal of Electronic Materials

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  • Report No.: SAND99-1645J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 8439
  • Archival Resource Key: ark:/67531/metadc785200

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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Creation Date

  • June 30, 1999

Added to The UNT Digital Library

  • Dec. 3, 2015, 9:30 a.m.

Description Last Updated

  • April 10, 2017, 3:57 p.m.

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Cao, X.A.; Dang, G.T.; Hickman, R.A.; Pearton, S.J.; Ren, F.; Shul, R.J. et al. Plasma Damage in p-GaN, article, June 30, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc785200/: accessed November 18, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.