TEM characterization of GaN nanowires

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Transmission electron microscopy was applied to study GaN nanowires grown on carbon nanotube surfaces by chemical reaction between Ga{sub 2}O and NH{sub 3} gas in a conventional furnace. These wires grew in two crystallographic directions, <2{und 11}0> and <01{und 1}0> (fast growth directions of GaN), in the form of whiskers covered by small elongated GaN platelets. The morphology of these platelets is similar to that observed during the growth of single crystals from a Ga melt at high temperatures under high nitrogen pressure. It is thought that growth of nanowires in two different crystallographic directions and the arrangement of the ... continued below

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15 pages

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Liliental-Weber, Zuzanna; Gao, Y.H. & Bando, Y. February 21, 2002.

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Transmission electron microscopy was applied to study GaN nanowires grown on carbon nanotube surfaces by chemical reaction between Ga{sub 2}O and NH{sub 3} gas in a conventional furnace. These wires grew in two crystallographic directions, <2{und 11}0> and <01{und 1}0> (fast growth directions of GaN), in the form of whiskers covered by small elongated GaN platelets. The morphology of these platelets is similar to that observed during the growth of single crystals from a Ga melt at high temperatures under high nitrogen pressure. It is thought that growth of nanowires in two different crystallographic directions and the arrangement of the platelets to the central whisker may be influenced by the presence of Ga{sub 2}O{sub 3} (based on the observation of the energy dispersive x-ray spectra), the interplanar spacings in the wire, and the presence of defects on the interface between the central part of the nanowire and the platelets surrounding it.

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15 pages

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OSTI as DE00840974

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  • Journal Name: Journal of Electronic Materials; Journal Volume: 31; Journal Issue: 5; Other Information: Submitted to the Journal of Electronic Materials: Volume 31, No.5; Journal Publication Date: 2002

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  • Report No.: LBNL--50192
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 840974
  • Archival Resource Key: ark:/67531/metadc784730

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Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • February 21, 2002

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  • Dec. 3, 2015, 9:30 a.m.

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  • April 4, 2016, 2:35 p.m.

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Liliental-Weber, Zuzanna; Gao, Y.H. & Bando, Y. TEM characterization of GaN nanowires, article, February 21, 2002; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc784730/: accessed November 15, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.