Inversion domains in AlN grown on (0001) sapphire

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Al-polarity inversion domains formed during AlN layer growth on (0001) sapphire were identified using transmission electron microscopy (TEM). They resemble columnar inversion domains reported for GaN films grown on (0001) sapphire. However, for AlN, these columns have a V-like shape with boundaries that deviate by 2 {+-} 0.5{sup o} from the c-axis. TEM identification of these defects agrees with the post-growth surface morphology as well as with the microstructure revealed by etching in hot aqueous KOH.

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Jasinski, J.; Liliental-Weber, Z.; Paduano, Q.S. & Weyburne, D.W. August 25, 2003.

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Al-polarity inversion domains formed during AlN layer growth on (0001) sapphire were identified using transmission electron microscopy (TEM). They resemble columnar inversion domains reported for GaN films grown on (0001) sapphire. However, for AlN, these columns have a V-like shape with boundaries that deviate by 2 {+-} 0.5{sup o} from the c-axis. TEM identification of these defects agrees with the post-growth surface morphology as well as with the microstructure revealed by etching in hot aqueous KOH.

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  • Journal Name: Applied Physics Letters; Journal Volume: 83; Journal Issue: 14; Other Information: Journal Publication Date: 10/06/2003

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  • Report No.: LBNL--53628
  • Grant Number: AC03-76SF00098
  • DOI: 10.1063/1.1616191 | External Link
  • Office of Scientific & Technical Information Report Number: 833701
  • Archival Resource Key: ark:/67531/metadc784677

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  • August 25, 2003

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  • Dec. 3, 2015, 9:30 a.m.

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  • June 22, 2016, 3:42 p.m.

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Jasinski, J.; Liliental-Weber, Z.; Paduano, Q.S. & Weyburne, D.W. Inversion domains in AlN grown on (0001) sapphire, article, August 25, 2003; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc784677/: accessed August 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.