Proton radiation damage in P-channel CCDs fabricated on high-resistivity silicon Metadata

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Title

  • Main Title Proton radiation damage in P-channel CCDs fabricated on high-resistivity silicon

Creator

  • Author: Bebek, C.
    Creator Type: Personal
  • Author: Groom, D.
    Creator Type: Personal
  • Author: Holland, S.
    Creator Type: Personal
  • Author: Karcher, A.
    Creator Type: Personal
  • Author: Kolbe, W.
    Creator Type: Personal
  • Author: Lee, J.
    Creator Type: Personal
  • Author: Levi, M.
    Creator Type: Personal
  • Author: Palaio, N.
    Creator Type: Personal
  • Author: Turko, B.
    Creator Type: Personal
  • Author: Uslenghi, M.
    Creator Type: Personal
  • Author: Wagner, M.
    Creator Type: Personal
  • Author: Wang, G.
    Creator Type: Personal

Contributor

  • Sponsor: USDOE Director. Office of Science. Office of High Energy Physics
    Contributor Type: Organization
  • Sponsor: NSF/ATI, NASA/SADD, USAF (United States)
    Contributor Type: Organization

Publisher

  • Name: Lawrence Berkeley National Laboratory
    Place of Publication: Berkeley, California
    Additional Info: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (United States)

Date

  • Creation: 2002-07-28

Language

  • English

Description

  • Content Description: P-channel, backside illuminated silicon CCDs were developed and fabricated on high-resistivity n-type silicon. Devices have been exposed up to 1x1011 protons/cm2 at 12 MeV. The charge transfer efficiency and dark current were measured as a function of radiation dose. These CCDs were found to be significantly more radiation tolerant than conventional n-channel devices. This could prove to be a major benefit for long duration space missions.
  • Physical Description: vp.

Subject

  • Keyword: Protons
  • Keyword: Ccd High Resistivity Silicon Radiation
  • STI Subject Categories: 47 Other Instrumentation
  • Keyword: Efficiency
  • Keyword: Radiations
  • Keyword: Radiation Doses
  • Keyword: Silicon Ccd High Resistivity Silicon Radiation

Source

  • Conference: IEEE Transactions Nuclear Science, San Diego, CA (US), 11/06/2001

Collection

  • Name: Office of Scientific & Technical Information Technical Reports
    Code: OSTI

Institution

  • Name: UNT Libraries Government Documents Department
    Code: UNTGD

Resource Type

  • Article

Format

  • Text

Identifier

  • Report No.: LBNL--49929
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 826086
  • Archival Resource Key: ark:/67531/metadc783609

Note

  • Display Note: OSTI as DE00826086
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