Progress and Continuing Challenges in GaSb-based III-V Alloys and Heterostructures Grown by Organometallic Vapor Phase Epitaxy

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This paper discusses progress in the preparation of mid-IR GaSb-based III-V materials grown by organometallic vapor phase epitaxy (OMVPE). The growth of these materials is complex, and fundamental and practical issues associated with their growth are outlined. Approaches that have been explored to further improve the properties and performance are briefly reviewed. Recent materials and device results on GaInAsSb bulk layers and GaInAsSb/AlGaAsSb heterostructures, grown lattice matched to GaSb, are presented. State-of-the-art GaInAsSb materials and thermophotovoltaic devices have been achieved. This progress establishes the high potential of OMVPE for mid-IR GaSb-based devices.

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1557 Kilobytes pages

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Wang, CA May 6, 2004.

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  • Lockheed Martin
    Publisher Info: Lockheed Martin Corporation, Schenectady, NY 12301 (United States)
    Place of Publication: Schenectady, New York

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Description

This paper discusses progress in the preparation of mid-IR GaSb-based III-V materials grown by organometallic vapor phase epitaxy (OMVPE). The growth of these materials is complex, and fundamental and practical issues associated with their growth are outlined. Approaches that have been explored to further improve the properties and performance are briefly reviewed. Recent materials and device results on GaInAsSb bulk layers and GaInAsSb/AlGaAsSb heterostructures, grown lattice matched to GaSb, are presented. State-of-the-art GaInAsSb materials and thermophotovoltaic devices have been achieved. This progress establishes the high potential of OMVPE for mid-IR GaSb-based devices.

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1557 Kilobytes pages

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OSTI as DE00824870

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  • Other Information: PBD: 6 May 2004

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  • Report No.: LM-04K036
  • Grant Number: AC12-00SN39357
  • DOI: 10.2172/824870 | External Link
  • Office of Scientific & Technical Information Report Number: 824870
  • Archival Resource Key: ark:/67531/metadc783556

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Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • May 6, 2004

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  • Dec. 3, 2015, 9:30 a.m.

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  • April 28, 2016, 8:53 p.m.

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Wang, CA. Progress and Continuing Challenges in GaSb-based III-V Alloys and Heterostructures Grown by Organometallic Vapor Phase Epitaxy, report, May 6, 2004; Schenectady, New York. (digital.library.unt.edu/ark:/67531/metadc783556/: accessed October 19, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.