High Performance InGaAsSb TPV Cells

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Description

Lattice-matched 0.52 eV InGaAsSb/GaSb thermophotovoltaic (TPV) cells are grown using a multi-wafer metal-organic-chemical-vapor-deposition (MOCVD) system. MOCVD growth series of P/N junction epitaxial structures consisting of as many as 30 wafers demonstrate good run-to-run reproducibility, good uniformity across the wafer and exhibit high performance with open circuit voltages of {approx}300mV and fill factors of 70% at 25 C. Growth parameters, including temperature, surface preparation and substrate orientation, that directly affect growth have been optimized for the active 0.52 eV InGaAsSb region and GaSb confinement layers. Focus is on increasing TPV diode performance through architectural improvements, specifically by reducing the minority carrier ... continued below

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109 Kilobytes pages

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Shellengarger, ZA; Taylor, GC; Martinelli, RU & Carpinelli, JM June 9, 2004.

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This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this report can be viewed below.

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  • Lockheed Martin
    Publisher Info: Lockheed Martin Corporation, Schenectady, NY 12301 (United States)
    Place of Publication: Schenectady, New York

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Description

Lattice-matched 0.52 eV InGaAsSb/GaSb thermophotovoltaic (TPV) cells are grown using a multi-wafer metal-organic-chemical-vapor-deposition (MOCVD) system. MOCVD growth series of P/N junction epitaxial structures consisting of as many as 30 wafers demonstrate good run-to-run reproducibility, good uniformity across the wafer and exhibit high performance with open circuit voltages of {approx}300mV and fill factors of 70% at 25 C. Growth parameters, including temperature, surface preparation and substrate orientation, that directly affect growth have been optimized for the active 0.52 eV InGaAsSb region and GaSb confinement layers. Focus is on increasing TPV diode performance through architectural improvements, specifically by reducing the minority carrier recombination velocity at the emitter and base front and back interfaces. Work in support of incorporating a back surface reflector (BSR) including the growth of N/P diode architectures and the addition of a lattice-matched InAsSb etch stop layer for substrate removal and wafer bonding, is reported. The lattice matched InAsSb stop etch exhibits resiliency to the substrate removal and wafer bonding processes. Substantial improvement in carrier lifetime on test structures with P-type AlGaAsSb layers indicated incorporation of these layers into the TPV cell structure should provide significant improvement in open-circuit voltage. Addition of AlGaAsSb confinement layers to the standard P/N cell structure gave some of the best InGaAsSb TPV cell results to date.

Physical Description

109 Kilobytes pages

Notes

OSTI as DE00837460

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  • Other Information: PBD: 9 Jun 2004

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  • Report No.: LM-04K048
  • Grant Number: AC 12-00-SN39357
  • DOI: 10.2172/837460 | External Link
  • Office of Scientific & Technical Information Report Number: 837460
  • Archival Resource Key: ark:/67531/metadc783329

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  • June 9, 2004

Added to The UNT Digital Library

  • Dec. 3, 2015, 9:30 a.m.

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  • April 28, 2016, 8:44 p.m.

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Shellengarger, ZA; Taylor, GC; Martinelli, RU & Carpinelli, JM. High Performance InGaAsSb TPV Cells, report, June 9, 2004; Schenectady, New York. (digital.library.unt.edu/ark:/67531/metadc783329/: accessed August 22, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.